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PZT3904

Onsemi

PZT3904 by Onsemi

PZT3904 by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 30, and max. operating temp of 150°C. Ideal for switching applications due to its small outline package style, it has a max. collector-emitter voltage of 40V and transition frequency of 300MHz.

Median Price

$0.099

Lifecycle Status

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30

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1k+

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Adafruit Industries

USA . 40 parts In-Stock

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Digiode

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Nova Conductors

Japan . 300 parts In-Stock

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Mobius Materials

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Component Sense

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LIBRA Elektronik GmbH

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Semicontronic

India . 40 parts In-Stock

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Corphita

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Argo Parts USA

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Continental Prestige Electronics

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Advanced Electronics

New Zealand . 40 parts In-Stock

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Aztec Data Supply Inc.

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IDEA Electronic Components Group

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Modulus Dynamics

Lithuania . 21,419 parts In-Stock

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MKK Technologies

India . 700 parts In-Stock

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DigiPath Technology Company

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Italy . 236 parts In-Stock

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Metaverse IC Inc.

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Assy Fe

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Kulean Microsystems

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UHIMA Technologies

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Parana Technologies

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Overview

Enhance your electronic projects with the high-quality PZT3904 NPN transistor by Onsemi. Designed for switching applications, this small signal bipolar junction transistor offers reliability and efficiency. With a maximum collector-emitter voltage of 40V and a nominal transition frequency of 300 MHz, this transistor is ideal for a range of circuits. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and unlock the full potential of your designs with the PZT3904.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor will perform well in such scenarios.

Surface Mount: YES

Surface mount capability makes it easy to integrate into modern PCB designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the PCB.

No. of Terminals: 4

The number of terminals is optimal for the transistor's intended use.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation rating, this transistor can handle demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on the PCB.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures stable and reliable performance.

Maximum Operating Temperature: 150 °C

Operates efficiently at high temperatures, suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 40 V

Offers a high maximum voltage rating, allowing for flexibility in circuit design.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements.

Maximum Turn On Time (ton): 70 ns

Fast turn on time ensures quick response in switching applications.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this transistor can handle moderate current loads.

Maximum Turn Off Time (toff): 250 ns

Sufficient turn off time to prevent unwanted current flow during switching.

Terminal Finish: TIN

Tin finish provides good conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position allows for versatile connection options.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

Reflow process can be completed quickly and efficiently.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure solder joints during assembly.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for fast signal switching in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT3904 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

PZT3904 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-440-7474, 5961014407474

NIIN

014407474

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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