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PZT3906,115

NXP Semiconductors

PZT3906,115 by NXP Semiconductors

PZT3906,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 30, and IC of 0.1A. With a max operating temperature of 150°C, it has a fT of 250MHz making it suitable for high-frequency switching circuits.

Median Price

$0.295

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,628 parts In-Stock

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Digiode

USA . 2,938 parts In-Stock

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Component Sense

UK . 1,960 parts In-Stock

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$0.295

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$0.200

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$0.200

1,960

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$0.200

Anansix

USA . 1,573 parts In-Stock

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Nova Conductors

Japan . 79 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,574 parts In-Stock

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$0.760

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$0.760

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Corohmni

South Africa . 76 parts In-Stock

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$1.446

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76

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AZTECH Wire

Italy . 582 parts In-Stock

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$12.791

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Ampacity Inc.

Singapore . 659 parts In-Stock

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$23.050

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Semicontronic

India . 1,260 parts In-Stock

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$26.050

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$25.399

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$25.268

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One Stop Electronics

USA . 219 parts In-Stock

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$34.050

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QUARKTWIN TECHNOLOGY LTD

USA . 20,545 parts In-Stock

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Microchip USA

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Continental Prestige Electronics

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UNI Independent Distributors

Spain . 1,573 parts In-Stock

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Corphita

USA . 1,321 parts In-Stock

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Argo Parts USA

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Aranea Global

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Overview

Enhance your electronic projects with the high-quality PZT3906,115 Small Signal Bipolar Junction Transistor by NXP Semiconductors. This PNP transistor offers superior performance in switching applications, boasting a low VCEsat of 0.4V and a rugged design for reliable operation. With a maximum collector-emitter voltage of 40V and a transition frequency of 250MHz, this transistor is perfect for a wide range of small signal amplification and switching tasks. Trust NXP Semiconductors to deliver top-tier components that provide unmatched value and efficiency for your projects. Elevate your designs with the PZT3906,115 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for current to flow from emitter to collector, making it a versatile choice for switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to implement in various projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low on-state voltage, making it ideal for efficient power control.

Surface Mount: YES

Being surface mountable, this transistor is easy to solder onto printed circuit boards, saving space and allowing for higher component density.

Maximum VCEsat: 0.4 V

The low maximum VCEsat of 0.4V ensures minimal voltage drop during operation, leading to reduced power loss and improved efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and provides a stable mounting surface for the transistor.

Terminal Form: GULL WING

The gull wing terminal form offers secure connections and facilitates easy soldering, ensuring reliable performance in various electronic applications.

No. of Terminals: 4

With 4 terminals, this transistor provides flexibility in circuit connections and enables easy interfacing with other components.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs, making it suitable for compact electronic devices and applications with space constraints.

Maximum Power Dissipation Ambient: 1.5 W

The high maximum power dissipation rating of 1.5W allows for reliable operation in demanding environments and ensures long-term performance.

Minimum DC Current Gain (hFE): 30

With a minimum DC current gain of 30, this transistor provides consistent and stable amplification of input signals, ensuring accurate switching performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for operation in a wide range of environmental conditions, making it suitable for industrial and automotive applications.

Maximum Collector-Base Capacitance: 4.5 pF

The low maximum collector-base capacitance helps reduce signal distortion and improves high-frequency performance, making this transistor suitable for fast-switching applications.

Maximum Collector-Emitter Voltage: 40 V

With a maximum collector-emitter voltage of 40V, this transistor can handle a wide range of voltages, making it versatile for various voltage levels in circuit designs.

Transistor Element Material: SILICON

The silicon material used in the transistor element offers high reliability, low noise, and excellent thermal conductivity, ensuring stable performance in diverse applications.

Maximum Turn On Time (ton): 65 ns

The fast maximum turn-on time of 65ns ensures quick response and high-speed switching, making it suitable for applications requiring rapid on/off transitions.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current loads, making it suitable for low to medium power applications.

Maximum Turn Off Time (toff): 300 ns

The relatively low maximum turn-off time of 300ns enables fast switching speeds and efficient power control, enhancing the performance of switching circuits.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability and stable performance in various operating conditions.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting and connection options, ensuring compatibility with different circuit layouts and configurations.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and facilitates thermal management, making it easier to integrate the transistor into power control applications.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency of 250MHz indicates excellent high-frequency performance, making this transistor suitable for applications requiring fast signal processing and switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT3906,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

65 ns

Maximum VCEsat:

.4 V

Trade Compliance

PZT3906,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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