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MPS8099RLRMG

Onsemi

MPS8099RLRMG by Onsemi

MPS8099RLRMG by Onsemi is a NPN BJT transistor with 3 terminals and 0.5A max collector current. With hFE of 75, it's ideal for amplifier applications. Operating at up to 150 °C, it has a max power dissipation of 0.625W in a cylindrical package.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 8,140 parts In-Stock

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Digiode

USA . 1,167 parts In-Stock

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Benley Electronics

USA . 10 parts In-Stock

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$0.500

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10

$0.500

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AZTECH Wire

Italy . 687 parts In-Stock

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$18.110

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SupplyDigital Components

Austria . 4,804 parts In-Stock

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Kulean Microsystems

USA . 3,638 parts In-Stock

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TANS Electronics

Latvia . 2,617 parts In-Stock

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Corphita

USA . 2,245 parts In-Stock

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Problanco Electronics

Mexico . 709 parts In-Stock

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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Corohmni

South Africa . 465 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality MPS8099RLRMG Small Signal Bipolar Junction Transistor by Onsemi. Designed for amplifier applications, this NPN transistor offers maximum power dissipation of 0.625W and a minimum DC current gain of 75. With a maximum operating temperature of 150 °C and a peak reflow temperature of 260°C, this transistor guarantees reliable performance in various environments. Trust in Onsemi's expertise in semiconductor manufacturing to deliver cutting-edge technology that enhances the functionality of your products. Get your hands on the MPS8099RLRMG today and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making it ideal for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this a versatile choice for various amplifier applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces complexity, making this transistor easy to use for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capability, this transistor can handle higher power levels without overheating, ensuring reliable operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, making this transistor convenient for assembly in through-hole PCBs.

Maximum Collector-Emitter Voltage: 80 V

With a high voltage rating, this transistor can withstand higher voltages, making it suitable for a wide range of amplifier applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering during manufacturing processes, ensuring consistent performance in the final product.

Nominal Transition Frequency (fT): 150 MHz

A high transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS8099RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS8099RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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