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MPSA56RLRPG

Onsemi

MPSA56RLRPG by Onsemi

MPSA56RLRPG by Onsemi is a PNP BJT with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. power dissipation of 0.625W in a cylindrical package style.

Median Price

$0.087

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 127 parts In-Stock

1+ parts

$0.087

100+ parts

$0.082

1k+ parts

$0.074

10k+ parts

-

127

$0.087

$0.082

$0.074

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.077

100+ parts

-

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50

$0.077

-

-

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Digiode

USA . 363 parts In-Stock

1+ parts

$0.083

100+ parts

-

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363

$0.083

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Vyrian

USA . 6,941 parts In-Stock

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6,941

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Distributors (Availability)

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Ampacity Inc.

Singapore . 99 parts In-Stock

1+ parts

$0.074

100+ parts

-

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99

$0.074

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Corohmni

South Africa . 259 parts In-Stock

1+ parts

$0.076

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-

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259

$0.076

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-

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Netroflash

USA . 100 parts In-Stock

1+ parts

$0.077

100+ parts

$0.076

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-

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100

$0.077

$0.076

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-

Corphita

USA . 2,004 parts In-Stock

1+ parts

$0.078

100+ parts

-

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2,004

$0.078

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Component Stockers USA

USA . 1,176 parts In-Stock

1+ parts

$0.090

100+ parts

$0.080

1k+ parts

$0.070

10k+ parts

-

1,176

$0.090

$0.080

$0.070

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Aztec Data Supply Inc.

USA . 2,418 parts In-Stock

1+ parts

$1.480

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-

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2,418

$1.480

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AZTECH Wire

Italy . 856 parts In-Stock

1+ parts

$15.240

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856

$15.240

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QUARKTWIN TECHNOLOGY LTD

USA . 11,435 parts In-Stock

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11,435

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Problanco Electronics

Mexico . 8,072 parts In-Stock

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8,072

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Kulean Microsystems

USA . 6,489 parts In-Stock

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6,489

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Argo Parts USA

USA . 3,752 parts In-Stock

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3,752

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SupplyDigital Components

Austria . 3,483 parts In-Stock

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3,483

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Continental Prestige Electronics

USA . 3,292 parts In-Stock

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3,292

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TANS Electronics

Latvia . 2,861 parts In-Stock

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2,861

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Perfect Parts

USA . 2,240 parts In-Stock

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2,240

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UHIMA Technologies

Türkiye . 913 parts In-Stock

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913

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Overview

Unlock the power of high-quality small signal bipolar junction transistors with the MPSA56RLRPG by Onsemi. Manufactured by a reputable brand known for excellence, this PNP transistor offers a multitude of applications in amplifiers. With a maximum power dissipation of 0.625 W and a minimum DC current gain of 100, this transistor delivers reliable performance in a convenient through-hole package. Take advantage of the benefits of this product, such as its robust construction and efficient operation, to elevate your electronic projects to new heights. Choose Onsemi for superior quality and unparalleled value in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are often used in high-side switching applications, making this transistor suitable for a variety of amplifier circuits.

Configuration: SINGLE

A single configuration simplifies the circuit design and makes it easier to integrate this transistor into different amplifier setups.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

The round shape allows for easy mounting and handling, making it convenient for various amplifier projects.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection, enhancing the stability of the transistor in amplifier circuits.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and allows for versatile connectivity options in amplifier applications.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle moderate power levels in amplifier circuits without overheating.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80V allows for the transistor to be used in a wide range of amplifier applications.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures consistent and reliable amplification of signals in various amplifier circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, ensuring stable performance in amplifier applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a suitable choice for amplifier circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current levels in amplifier circuits.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable connections in amplifier applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for robust soldering processes, ensuring proper assembly of the transistor in amplifier circuits.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50MHz, this transistor can efficiently amplify signals within this frequency range, making it suitable for high-frequency amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA56RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA56RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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