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MPSW05G

Onsemi

MPSW05G by Onsemi

The Onsemi MPSW05G is a NPN BJT transistor with 60V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in a cylindrical shape with through-hole terminals for easy installation.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,414 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

4,414

-

$0.119

$0.099

$0.088

DigiKey

USA . 4,414 parts In-Stock

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$0.150

4,414

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$0.150

Distributors (In-Stock)

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Digiode

USA . 2,087 parts In-Stock

1+ parts

$0.093

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2,087

$0.093

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DigiKey Marketplace

USA . 4,414 parts In-Stock

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4,414

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Vyrian

USA . 3,110 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,258 parts In-Stock

1+ parts

$0.088

100+ parts

-

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1,258

$0.088

-

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Corohmni

South Africa . 421 parts In-Stock

1+ parts

$0.098

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421

$0.098

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AZTECH Wire

Italy . 984 parts In-Stock

1+ parts

$20.450

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984

$20.450

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Kulean Microsystems

USA . 8,188 parts In-Stock

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8,188

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TANS Electronics

Latvia . 7,713 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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Perfect Parts

USA . 5,591 parts In-Stock

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5,591

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Continental Prestige Electronics

USA . 4,414 parts In-Stock

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$0.088

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4,414

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$0.088

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SupplyDigital Components

Austria . 4,211 parts In-Stock

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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477

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Problanco Electronics

Mexico . 441 parts In-Stock

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441

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Overview

Enhance your electronic projects with the MPSW05G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for amplification applications. Manufactured by Onsemi, known for their reliable and innovative components, this NPN transistor offers a maximum power dissipation of 1W and a maximum collector-emitter voltage of 60V. With a minimum DC current gain of 60 and a peak reflow temperature of 260 °C, this transistor provides exceptional performance and reliability. Upgrade your amplifier circuits with the MPSW05G and experience the superior quality and value that Onsemi products deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, which is ideal for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor suitable for amplifier circuits.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels in amplifier circuits without overheating.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures that the transistor provides sufficient amplification for the signal in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to operate reliably in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60 V, this transistor can handle higher voltage levels in the circuit.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5 A enables the transistor to conduct higher currents in the circuit without damage.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50 MHz indicates that the transistor can switch states quickly, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW05G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW05G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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