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MPSW51G

Onsemi

MPSW51G by Onsemi

MPSW51G by Onsemi is a PNP BJT with 1W power dissipation, 30V max collector-emitter voltage, and 50MHz transition frequency. Ideal for low-power applications requiring high DC current gain in a cylindrical package with through-hole terminals.

Median Price

$0.236

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,381 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.175

10k+ parts

$0.156

13,381

-

$0.211

$0.175

$0.156

DigiKey

USA . 13,381 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.260

13,381

-

-

-

$0.260

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 323 parts In-Stock

1+ parts

$0.164

100+ parts

-

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-

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323

$0.164

-

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Vyrian

USA . 4,105 parts In-Stock

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4,105

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,775 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

-

10k+ parts

-

1,775

$0.156

-

-

-

Corohmni

South Africa . 221 parts In-Stock

1+ parts

$0.173

100+ parts

-

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-

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-

221

$0.173

-

-

-

Component Stockers USA

USA . 14,453 parts In-Stock

1+ parts

$0.180

100+ parts

$0.170

1k+ parts

$0.150

10k+ parts

$0.150

14,453

$0.180

$0.170

$0.150

$0.150

AZTECH Wire

Italy . 480 parts In-Stock

1+ parts

$9.170

100+ parts

-

1k+ parts

-

10k+ parts

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480

$9.170

-

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QUARKTWIN TECHNOLOGY LTD

USA . 20,503 parts In-Stock

1+ parts

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20,503

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Continental Prestige Electronics

USA . 13,381 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.157

10k+ parts

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13,381

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-

$0.157

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SupplyDigital Components

Austria . 6,831 parts In-Stock

1+ parts

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6,831

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Kulean Microsystems

USA . 6,284 parts In-Stock

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6,284

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Kepictronics

USA . 5,000 parts In-Stock

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5,000

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TANS Electronics

Latvia . 3,388 parts In-Stock

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3,388

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Problanco Electronics

Mexico . 697 parts In-Stock

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697

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UHIMA Technologies

Türkiye . 148 parts In-Stock

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148

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Overview

Discover the power of the MPSW51G by Onsemi, a top-notch Small Signal Bipolar Junction Transistor that delivers exceptional performance and reliability. Manufactured by industry leader Onsemi, this PNP transistor offers superior quality and precision engineering for a wide range of applications. With a maximum operating temperature of 150 °C, a maximum collector-emitter voltage of 30V, and a peak reflow temperature of 260°C, the MPSW51G is designed to impress. Whether you're looking for efficiency, durability, or versatility, this transistor has got you covered. Upgrade your projects with the MPSW51G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the transistor package.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with other PNP components in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and enhances ease of use.

Package Shape: ROUND

The round package shape provides compactness and versatility in mounting options.

Terminal Form: THROUGH-HOLE

The through-hole terminals offer secure and robust connections during soldering.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this transistor can handle high power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and space-saving benefits.

Minimum DC Current Gain (hFE): 50

The high minimum DC current gain ensures reliable amplification and signal control.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for use in a wide range of environments.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating of 30V ensures robust performance in various circuit applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor operation.

Maximum Collector Current (IC): 1 A

The high maximum collector current rating of 1A allows for handling of large currents without damage.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish provides excellent conductivity and corrosion resistance.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures reliable soldering during assembly.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50MHz enables fast switching speeds for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW51G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW51G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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