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MPS4124G

Onsemi

MPS4124G by Onsemi

MPS4124G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 60, and operates at up to 150 °C. With a max collector-emitter voltage of 25V and max collector current of 0.2A, it offers reliable performance in various electronic circuits.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 49,740 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

49,740

-

$0.053

$0.044

$0.039

DigiKey

USA . 49,740 parts In-Stock

1+ parts

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$0.070

49,740

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$0.070

Verical

USA . 25,000 parts In-Stock

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$0.049

25,000

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$0.049

Distributors (In-Stock)

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Digiode

USA . 2,452 parts In-Stock

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$0.041

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2,452

$0.041

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DigiKey Marketplace

USA . 49,740 parts In-Stock

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49,740

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Chip Stock

USA . 22,000 parts In-Stock

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Vyrian

USA . 11,596 parts In-Stock

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11,596

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Distributors (Availability)

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Corphita

USA . 1,769 parts In-Stock

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$0.039

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1,769

$0.039

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Component Stockers USA

USA . 52,898 parts In-Stock

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$0.040

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$0.040

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$0.040

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$0.040

52,898

$0.040

$0.040

$0.040

$0.040

Corohmni

South Africa . 447 parts In-Stock

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$0.043

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447

$0.043

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AZTECH Wire

Italy . 571 parts In-Stock

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$19.190

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571

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Continental Prestige Electronics

USA . 49,740 parts In-Stock

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$0.039

49,740

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$0.039

QUARKTWIN TECHNOLOGY LTD

USA . 29,935 parts In-Stock

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SupplyDigital Components

Austria . 7,394 parts In-Stock

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Problanco Electronics

Mexico . 6,356 parts In-Stock

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Kulean Microsystems

USA . 6,285 parts In-Stock

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TANS Electronics

Latvia . 861 parts In-Stock

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UHIMA Technologies

Türkiye . 386 parts In-Stock

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Overview

Enhance your electronic projects with the MPS4124G Small Signal Bipolar Junction Transistor by Onsemi. Manufactured with high-quality materials and advanced technology, this NPN transistor is perfect for amplifier applications. Its compact design, high power dissipation, and reliable performance make it a valuable component for various projects. Trust Onsemi's reputation for excellence and elevate your designs with the MPS4124G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it a good choice for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to work with.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and placement in circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection to the circuit board, ensuring reliability in operation.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain of 60 ensures consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to perform reliably in a wide range of environments.

Maximum Collector-Emitter Voltage: 25 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making this transistor a dependable choice for various applications.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2 A allows the transistor to handle moderate current levels in the circuit.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish ensures a secure and reliable connection, minimizing the risk of signal loss or interference.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to solder the transistor onto the circuit board, ensuring a secure connection.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for efficient soldering during the manufacturing process, ensuring a reliable connection.

Nominal Transition Frequency (fT): 170 MHz

With a high nominal transition frequency, this transistor can handle high-frequency signals with minimal distortion, making it ideal for amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4124G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4124G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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