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MPS4124

Onsemi

MPS4124 by Onsemi

MPS4124 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 60, and operates at up to 150 °C. With a max collector-emitter voltage of 25V and max collector current of 0.2A, it offers reliable performance in various electronic circuits.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 5,530 parts In-Stock

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$0.048

5,530

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$0.048

Rochester

USA . 3,530 parts In-Stock

1+ parts

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$0.053

1k+ parts

$0.044

10k+ parts

$0.039

3,530

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

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Freelance Electronics

USA . 32 parts In-Stock

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$0.034

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$0.034

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Digiode

USA . 1,539 parts In-Stock

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$0.041

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$0.041

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Vyrian

USA . 1,458 parts In-Stock

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$0.043

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$0.060

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1

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Chip Stock

USA . 66,000 parts In-Stock

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R&J Components

USA . 34,466 parts In-Stock

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Extreme Components

USA . 1,000 parts In-Stock

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J2 Sourcing AB

Sweden . 490 parts In-Stock

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490

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A2Z Electronics, Inc.

USA . 423 parts In-Stock

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Bristol Electronics

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Electronic Expediters

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Electronic Supply

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EMSNET

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ECAB

Sweden . 20 parts In-Stock

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Speed Components Ltd

Israel . 19 parts In-Stock

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LittleDiode

UK . 9 parts In-Stock

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Corohmni

South Africa . 325 parts In-Stock

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$0.034

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325

$0.034

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Corphita

USA . 1,696 parts In-Stock

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$0.039

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Perfect Parts

USA . 23,307 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,373 parts In-Stock

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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SupplyDigital Components

Austria . 7,298 parts In-Stock

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TANS Electronics

Latvia . 7,287 parts In-Stock

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Problanco Electronics

Mexico . 7,272 parts In-Stock

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Continental Prestige Electronics

USA . 5,530 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,492 parts In-Stock

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Kulean Microsystems

USA . 4,690 parts In-Stock

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UHIMA Technologies

Türkiye . 17 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality MPS4124 NPN transistor by Onsemi. Designed for small signal amplification, this transistor offers reliable performance and durability thanks to its plastic/epoxy package body material and silicon element. With a minimum DC current gain of 60 and a maximum operating temperature of 150 °C, the MPS4124 is perfect for a wide range of applications. Trust Onsemi's expertise in semiconductor manufacturing and experience the value and benefits that this transistor brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

Allows for easy integration into circuits and compatibility with other NPN components.

Configuration: SINGLE

Simplified design and easy to use in single-transistor amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Maximum Power Dissipation: 0.625 W

Can handle higher power levels without overheating, ensuring reliability in operation.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low to medium voltage applications, providing versatility in circuit design.

Maximum Collector Current: 0.2 A

Able to handle moderate current levels, making it suitable for a range of amplifier applications.

Nominal Transition Frequency: 170 MHz

High frequency capability allows for efficient signal amplification in audio and radio frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4124 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4124 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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