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MPS4126RL1

Onsemi

MPS4126RL1 by Onsemi

MPS4126RL1 by Onsemi is a PNP BJT transistor with hFE of 60, VCE of 25V, and fT of 170MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates at max temp of 150 °C with a collector current of 0.2A.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 1,832 parts In-Stock

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Digiode

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Kulean Microsystems

USA . 5,911 parts In-Stock

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TANS Electronics

Latvia . 3,359 parts In-Stock

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Problanco Electronics

Mexico . 2,796 parts In-Stock

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SupplyDigital Components

Austria . 1,368 parts In-Stock

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Corphita

USA . 924 parts In-Stock

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Corohmni

South Africa . 293 parts In-Stock

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UHIMA Technologies

Türkiye . 257 parts In-Stock

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Overview

Enhance your amplifier circuits with the MPS4126RL1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. This PNP small signal bipolar junction transistor offers exceptional performance in various applications, making it a versatile choice for amplification needs. With a minimum DC current gain of 60 and a maximum operating temperature of 150 °C, this transistor ensures efficient and stable operation. Trust Onsemi's expertise and choose the MPS4126RL1 for superior results in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection to the transistor, making it suitable for various applications with its rugged design.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into most amplifier circuits, enabling the transistor to amplify signals effectively.

Configuration: SINGLE

The single configuration simplifies the circuit design process and ensures straightforward operation of the transistor.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance and reliability in signal amplification processes.

Package Shape: ROUND

The round package shape facilitates easy mounting and handling of the transistor in various electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and stability during soldering, ensuring a reliable electrical connection.

No. of Terminals: 3

With 3 terminals, this transistor offers versatility in circuit connections and enables a wide range of applications in electronics.

Package Style (Meter): CYLINDRICAL

The cylindrical package style facilitates efficient heat dissipation and ensures optimal performance of the transistor under high temperature conditions.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain of 60 indicates a high amplification capability, making this transistor suitable for high-gain amplifier circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, ensuring stable performance in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage of 25V allows for safe operation within specified voltage limits, protecting the transistor from voltage spikes or overloads.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers high reliability, low leakage current, and consistent performance, making it a preferred choice for small signal applications.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2A indicates a high current-carrying capacity, allowing the transistor to handle moderate power levels in amplifier circuits.

Terminal Finish: TIN LEAD

The tin lead terminal finish enhances solderability and corrosion resistance, ensuring reliable connections and long-term performance of the transistor.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and assembly processes, offering convenience and efficiency during circuit implementation.

Nominal Transition Frequency (fT): 170 MHz

With a nominal transition frequency of 170MHz, this transistor can handle high-frequency signals and deliver fast response times in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4126RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4126RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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