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MPS4124RLRAG

Onsemi

MPS4124RLRAG by Onsemi

MPS4124RLRAG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 25V and max current of 0.2A, ideal for amplifier applications. It has a min DC current gain of 60 and operates up to 150 °C, featuring a cylindrical package style with through-hole terminals. The transistor element material is silicon, with a nominal transition frequency of 170MHz.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 827 parts In-Stock

1+ parts

$0.134

100+ parts

$0.087

1k+ parts

$0.070

10k+ parts

-

827

$0.134

$0.087

$0.070

-

Rochester

USA . 164,207 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

164,207

-

$0.092

$0.077

$0.068

DigiKey

USA . 164,207 parts In-Stock

1+ parts

-

100+ parts

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$0.120

164,207

-

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-

$0.120

Verical

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

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$0.086

60,000

-

-

-

$0.086

Chip1Stop

Japan . 8,202 parts In-Stock

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-

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8,202

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-

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Distributors (In-Stock)

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Digiode

USA . 286 parts In-Stock

1+ parts

$0.033

100+ parts

-

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286

$0.033

-

-

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Vyrian

USA . 2,439 parts In-Stock

1+ parts

$0.035

100+ parts

-

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-

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2,439

$0.035

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Chip Stock

USA . 35,000 parts In-Stock

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35,000

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Q Components

USA . 3,999 parts In-Stock

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3,999

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Carlin Systems, Inc.

USA . 1,188 parts In-Stock

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1,188

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Distributors (Availability)

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Corphita

USA . 922 parts In-Stock

1+ parts

$0.032

100+ parts

-

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922

$0.032

-

-

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Corohmni

South Africa . 257 parts In-Stock

1+ parts

$0.035

100+ parts

-

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257

$0.035

-

-

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Component Stockers USA

USA . 216,568 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.070

216,568

$0.040

$0.040

$0.040

$0.070

Continental Prestige Electronics

USA . 164,207 parts In-Stock

1+ parts

-

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$0.069

10k+ parts

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164,207

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-

$0.069

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Perfect Parts

USA . 83,726 parts In-Stock

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83,726

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Kepictronics

USA . 54,000 parts In-Stock

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54,000

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QUARKTWIN TECHNOLOGY LTD

USA . 18,445 parts In-Stock

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TANS Electronics

Latvia . 7,883 parts In-Stock

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Kulean Microsystems

USA . 6,443 parts In-Stock

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6,443

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A-Z Elektronik GmbH

Germany . 6,108 parts In-Stock

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6,108

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Problanco Electronics

Mexico . 4,233 parts In-Stock

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4,233

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SupplyDigital Components

Austria . 3,930 parts In-Stock

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3,930

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UHIMA Technologies

Türkiye . 238 parts In-Stock

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238

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Overview

Upgrade your amplifier with the MPS4124RLRAG by Onsemi. Crafted with precision and expertise, this NPN small signal bipolar junction transistor offers exceptional performance and reliability. Whether you're in need of high-quality components for audio equipment or electronic projects, this transistor delivers unparalleled value and benefits to customers. Trust in Onsemi's reputation for excellence and choose the MPS4124RLRAG for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term performance and reliability.

Polarity or Channel Type: NPN

Suitable for various amplifier applications and offers versatility in circuit design.

Configuration: SINGLE

Simplified circuit design and ease of use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

Compact design that saves space in circuit layouts.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards and provides a secure connection.

Maximum Power Dissipation (Abs): 0.625 W

Can handle high power levels, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without degrading performance, suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 25 V

Can handle high voltage levels, ensuring safety and reliability in the circuit.

Maximum Collector Current (IC): 0.2 A

Capable of handling moderate current levels in the circuit.

Nominal Transition Frequency (fT): 170 MHz

High frequency response, ideal for high-speed signal amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4124RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4124RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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