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MPS404ARL

Onsemi

MPS404ARL by Onsemi

MPS404ARL by Onsemi is a PNP BJT transistor with hFE of 30, VCEO of 35V, and IC of 0.15A. Ideal for chopper applications due to its single configuration and cylindrical package style. Suitable for use in environments up to 150 °C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,749 parts In-Stock

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Digiode

USA . 1,583 parts In-Stock

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1,583

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Problanco Electronics

Mexico . 8,397 parts In-Stock

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8,397

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SupplyDigital Components

Austria . 7,709 parts In-Stock

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Kulean Microsystems

USA . 3,810 parts In-Stock

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3,810

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TANS Electronics

Latvia . 2,432 parts In-Stock

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2,432

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UHIMA Technologies

Türkiye . 664 parts In-Stock

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664

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Corphita

USA . 599 parts In-Stock

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599

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Corohmni

South Africa . 354 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the MPS404ARL by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Small Signal Bipolar Junction Transistors that are perfect for a variety of applications, from choppers to amplifiers. With its PNP polarity and single configuration, this transistor offers reliability and efficiency like no other. Whether you're a hobbyist or a professional, the MPS404ARL provides value, benefits, and advantages that will take your projects to the next level. Trust Onsemi for top-notch quality and performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability, making the transistor suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in power applications, making this transistor suitable for chopper applications.

Configuration: SINGLE

Simplified design and application, easy to integrate into circuits.

Transistor Application: CHOPPER

Specifically designed for chopper applications, ensuring optimal performance.

Package Shape: ROUND

Provides a compact and uniform design, suitable for various mounting options.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and reliable electrical connections.

No. of Terminals: 3

Simple connectivity with minimal terminals, suitable for basic circuit designs.

Package Style (Meter): CYLINDRICAL

Offers a standardized form factor for easy integration into circuits.

Minimum DC Current Gain (hFE): 30

Ensures consistent amplification of current in the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where heat dissipation is important.

Maximum Collector-Emitter Voltage: 35 V

Designed to handle up to 35 volts, suitable for low-power applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance.

Maximum Collector Current (IC): 0.15 A

Capable of handling up to 0.15 amps of current, suitable for low-power circuits.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability, ensuring reliable connections.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and soldering.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS404ARL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

MPS404ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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