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MPS4124RLRM

Onsemi

MPS4124RLRM by Onsemi

MPS4124RLRM by Onsemi is a NPN BJT transistor with hFE of 60, VCE of 25V, and fT of 170MHz. Ideal for amplifier applications due to its single configuration and max collector current of 0.2A. This through-hole transistor in cylindrical package is made of silicon with tin lead finish.

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1k+

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Digiode

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Vyrian

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SupplyDigital Components

Austria . 7,518 parts In-Stock

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Kulean Microsystems

USA . 7,286 parts In-Stock

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Problanco Electronics

Mexico . 6,423 parts In-Stock

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TANS Electronics

Latvia . 4,361 parts In-Stock

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Corphita

USA . 2,036 parts In-Stock

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Corohmni

South Africa . 447 parts In-Stock

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UHIMA Technologies

Türkiye . 106 parts In-Stock

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Overview

Upgrade your amplifier circuits with the high-quality MPS4124RLRM Small Signal Bipolar Junction Transistor from Onsemi. Known for their reliable and durable components, Onsemi delivers top-notch performance in every product they create. Ideal for a wide range of applications, this NPN transistor offers a DC current gain of 60 and a maximum collector-emitter voltage of 25V. With a nominal transition frequency of 170 MHz, this transistor provides exceptional signal amplification capabilities. Trust Onsemi to provide you with the best-in-class components for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good electrical insulation and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering higher current and power capabilities compared to PNP transistors.

Configuration: SINGLE

Single configuration simplifies the circuit design and layout, making it easier to use in various amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, this transistor offers good gain and frequency response characteristics for audio and radio frequency amplification.

No. of Terminals: 3

The three-terminal configuration allows for easy connection in circuits and provides flexibility in circuit design.

Minimum DC Current Gain (hFE): 60

With a minimum DC current gain of 60, this transistor provides consistent and reliable amplification performance.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage of 25V allows for safe operation within specified voltage ranges, ensuring the transistor's longevity.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its high thermal conductivity and reliability, providing stable performance over a wide temperature range.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2A, this transistor can handle moderate current levels, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 170 MHz

The high nominal transition frequency of 170MHz indicates good high-frequency performance, making this transistor suitable for amplification in radio frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4124RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4124RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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