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MPS404ARLRA

Onsemi

MPS404ARLRA by Onsemi

MPS404ARLRA by Onsemi is a PNP BJT transistor with hFE of 30, VCEO of 35V, and IC of 0.15A. Ideal for chopper applications due to its single configuration and through-hole terminals in a cylindrical package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,189 parts In-Stock

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Vyrian

USA . 859 parts In-Stock

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859

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TANS Electronics

Latvia . 8,222 parts In-Stock

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SupplyDigital Components

Austria . 4,316 parts In-Stock

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Kulean Microsystems

USA . 4,309 parts In-Stock

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Problanco Electronics

Mexico . 3,178 parts In-Stock

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UHIMA Technologies

Türkiye . 709 parts In-Stock

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709

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Corphita

USA . 248 parts In-Stock

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Corohmni

South Africa . 220 parts In-Stock

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Overview

Looking to boost the performance of your chopper applications? Look no further than the MPS404ARLRA by Onsemi. With a reputation for quality and reliability, Onsemi delivers small signal bipolar junction transistors that exceed expectations. This PNP transistor offers a minimum DC current gain of 30 and a maximum collector-emitter voltage of 35V, making it ideal for a wide range of electronic projects. Trust Onsemi to provide the value, benefits, and advantages you need to take your designs to the next level with the MPS404ARLRA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Simplifies circuit design and ensures easy integration in projects.

Transistor Application: CHOPPER

Specifically designed for chopper applications, ensuring efficient and reliable performance in such circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and placement in designs, saving space and providing flexibility.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical connections, making it easier to solder and ensuring secure connections.

No. of Terminals: 3

The 3 terminals allow for simple connections and are suitable for basic transistor circuit configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor, ideal for applications with space constraints.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures amplification of the input signal, making this transistor efficient for signal processing.

Maximum Collector-Emitter Voltage: 35 V

With a maximum voltage rating of 35V, this transistor can handle moderate power levels and voltage variations in circuits.

Transistor Element Material: SILICON

Silicon material provides high performance, reliability, and efficiency compared to other semiconductor materials.

Maximum Collector Current (IC): 0.15 A

The maximum collector current of 0.15A allows the transistor to handle moderate current loads, suitable for a range of applications.

Terminal Finish: TIN LEAD

Tin lead finish on terminals ensures good solderability and conductivity, making it easy to attach external components.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, ensuring a secure and stable connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS404ARLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

MPS404ARLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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