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MPS4124RLRE

Onsemi

MPS4124RLRE by Onsemi

MPS4124RLRE by Onsemi is a NPN BJT transistor with hFE of 60, VCE of 25V, and fT of 170MHz. Ideal for amplifier applications due to its single configuration and max collector current of 0.2A. The package style is cylindrical with a plastic/epoxy body material and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,105 parts In-Stock

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Vyrian

USA . 497 parts In-Stock

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Problanco Electronics

Mexico . 7,414 parts In-Stock

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Kulean Microsystems

USA . 6,110 parts In-Stock

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TANS Electronics

Latvia . 5,172 parts In-Stock

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SupplyDigital Components

Austria . 2,914 parts In-Stock

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Corphita

USA . 2,339 parts In-Stock

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UHIMA Technologies

Türkiye . 190 parts In-Stock

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Corohmni

South Africa . 178 parts In-Stock

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Overview

Enhance your electronic projects with the versatile MPS4124RLRE Small Signal Bipolar Junction Transistor by Onsemi. With a focus on quality and reliability, Onsemi delivers top-notch components for a wide range of applications such as amplifiers. This NPN transistor boasts a high DC current gain and a maximum collector-emitter voltage of 25V, providing exceptional performance and value to customers. Trust Onsemi to provide innovative solutions for your next project with the MPS4124RLRE.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use in amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and handling, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong mechanical connection, ensuring reliable performance in various environments.

No. of Terminals: 3

Having 3 terminals allows for easy connection in amplifier circuits, simplifying the overall circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-saving design, ideal for applications where space is limited.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures stable and consistent amplification performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 25 V

With a maximum collector-emitter voltage of 25V, this transistor is suitable for low voltage amplification applications.

Transistor Element Material: SILICON

Silicon material provides high reliability and performance, making this transistor a dependable choice for amplifier circuits.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2A allows for adequate power handling capabilities in amplifier circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliable connections, enhancing the overall performance of the transistor.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and soldering, making installation convenient and efficient.

Nominal Transition Frequency (fT): 170 MHz

A high nominal transition frequency of 170MHz indicates that this transistor can efficiently amplify high-frequency signals, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4124RLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4124RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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