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MPS4126

Onsemi

MPS4126 by Onsemi

MPS4126 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 60, and fT of 170MHz. The transistor operates at up to 150 °C and supports a max collector-emitter voltage of 25V.

Median Price

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6

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1k+

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Chip Stock

USA . 32,000 parts In-Stock

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J2 Sourcing AB

Sweden . 2,750 parts In-Stock

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Vyrian

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Digiode

USA . 2,084 parts In-Stock

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Lakeview Electronics

USA . 290 parts In-Stock

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 4,550 parts In-Stock

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SupplyDigital Components

Austria . 2,554 parts In-Stock

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Kulean Microsystems

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Corphita

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TANS Electronics

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Overview

Enhance your electronic projects with the high-quality MPS4126 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient Small Signal Bipolar Junction Transistors (BJTs) like the MPS4126. This PNP transistor is perfect for amplifier applications, offering a maximum power dissipation of 0.625 W and a minimum DC current gain of 60. With a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 25 V, this transistor provides exceptional performance and durability. Upgrade your designs with the MPS4126 and experience the value and benefits that Onsemi products bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good thermal conductivity and electrical insulation, ensuring reliable performance of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching applications, making this transistor suitable for a variety of circuit designs.

Configuration: SINGLE

Single configuration transistors are simpler to work with and integrate into circuits, making this transistor user-friendly for designers.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers optimized performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during PCB assembly.

Maximum Power Dissipation: 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle moderate power levels in various applications.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures stable and predictable amplification characteristics in the transistor.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage of 25V allows for safe operation within specified voltage ranges in a circuit.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, low leakage currents, and good frequency response, making them a popular choice in electronic circuits.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2A allows for handling of moderate current levels, suitable for many common circuit applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliable electrical connections in the transistor.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to integrate the transistor into PCB layouts and ensures proper alignment during assembly.

Peak Reflow Temperature: 235 C

A peak reflow temperature of 235 °C allows for reliable soldering during PCB assembly processes.

Nominal Transition Frequency (fT): 170 MHz

With a nominal transition frequency of 170MHz, this transistor offers good high-frequency performance, suitable for many RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4126 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4126 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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