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MPS4124RL1

Onsemi

MPS4124RL1 by Onsemi

MPS4124RL1 by Onsemi is a NPN BJT transistor with hFE of 60, VCE of 25V, and IC of 0.2A. Ideal for amplifier applications, it operates up to 150 °C with a transition frequency of 170MHz in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 844 parts In-Stock

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Digiode

USA . 381 parts In-Stock

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381

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Kulean Microsystems

USA . 7,984 parts In-Stock

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SupplyDigital Components

Austria . 2,931 parts In-Stock

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Corphita

USA . 2,092 parts In-Stock

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TANS Electronics

Latvia . 550 parts In-Stock

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Problanco Electronics

Mexico . 491 parts In-Stock

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Corohmni

South Africa . 487 parts In-Stock

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UHIMA Technologies

Türkiye . 431 parts In-Stock

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Overview

Unlock the power of amplification with the MPS4124RL1 by Onsemi. Crafted with precision and expertise, Onsemi delivers unmatched quality in the field of Small Signal Bipolar Junction Transistors (BJT). Whether you're looking to enhance audio systems or boost signal strength, this NPN transistor offers a world of possibilities. With a maximum operating temperature of 150 °C and a high DC current gain of 60, the MPS4124RL1 ensures reliable performance in any application. Trust Onsemi to bring value and excellence to your projects with this top-of-the-line amplifier transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high input impedance and low output impedance.

Configuration: SINGLE

Simplified design and easier to troubleshoot in the circuit.

Transistor Application: AMPLIFIER

Optimized for amplifying signals with minimal distortion.

Package Shape: ROUND

Easier to mount and solder onto circuit boards.

Terminal Form: THROUGH-HOLE

Makes it suitable for through-hole PCB mounting and hand soldering.

No. of Terminals: 3

Provides necessary connections for the transistor to function properly.

Package Style (Meter): CYLINDRICAL

Offers a compact form factor for space-constrained applications.

Minimum DC Current Gain (hFE): 60

Ensures stable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments without degradation in performance.

Maximum Collector-Emitter Voltage: 25 V

Allows for safe operation within specified voltage limits.

Transistor Element Material: SILICON

Provides reliable and consistent performance over a wide range of operating conditions.

Maximum Collector Current (IC): 0.2 A

Supports moderate current flow for typical amplifier applications.

Terminal Finish: TIN LEAD

Facilitates good electrical contact and solderability for secure connections.

Terminal Position: BOTTOM

Ease of PCB layout and assembly in circuit designs.

Nominal Transition Frequency (fT): 170 MHz

Allows for high-frequency signal amplification with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4124RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4124RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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