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MPS4124RL

Onsemi

MPS4124RL by Onsemi

MPS4124RL by Onsemi is a NPN BJT transistor with hFE of 60, VCE of 25V, and IC of 0.2A. Ideal for amplifier applications, it has a max operating temp of 150 °C and fT of 170MHz. The package style is cylindrical with through-hole terminals in a plastic/epoxy body.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,453 parts In-Stock

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Vyrian

USA . 114 parts In-Stock

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TANS Electronics

Latvia . 6,836 parts In-Stock

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6,836

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Problanco Electronics

Mexico . 4,184 parts In-Stock

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SupplyDigital Components

Austria . 1,664 parts In-Stock

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Corphita

USA . 1,037 parts In-Stock

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Kulean Microsystems

USA . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 565 parts In-Stock

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Corohmni

South Africa . 224 parts In-Stock

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Overview

Enhance your electronic projects with the MPS4124RL by Onsemi, a high-quality small signal BJT that promises reliability and performance. Manufactured by the trusted brand Onsemi, this NPN transistor offers exceptional amplification capabilities for a wide range of applications. Whether you're working on audio amplifiers or signal processing circuits, the MPS4124RL is designed to deliver optimal results. Trust in Onsemi's expertise and choose the MPS4124RL for superior quality and value in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and resistant to environmental factors, ensuring durability and longevity.

Polarity or Channel Type: NPN

NPN type transistors are widely used in amplification applications due to their high input impedance and fast switching speeds.

Configuration: SINGLE

Single configuration transistors are easier to handle and integrate into circuit designs, making them ideal for simple amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Package Shape: ROUND

The round shape of the package allows for easier handling and installation, making it convenient for various amplification projects.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides a secure and stable connection, making it suitable for applications where reliability is crucial.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and configurations, offering versatility in amplifier design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-saving design, making it suitable for applications with limited space constraints.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can withstand high temperatures, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage of 25V allows for safe operation in various amplifier circuits without the risk of voltage breakdown.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, making the transistor suitable for long-term use in amplifier applications.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2A allows for sufficient current handling capacity, ensuring stable operation in amplifier circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability, making it easy to solder the transistor onto PCBs for secure connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and installation, ensuring proper alignment and connection in amplifier circuits.

Nominal Transition Frequency (fT): 170 MHz

A high nominal transition frequency of 170MHz allows for fast switching speeds, making the transistor suitable for high-frequency amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4124RL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4124RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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