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MPS4126RL

Onsemi

MPS4126RL by Onsemi

MPS4126RL by Onsemi is a PNP BJT transistor with hFE of 60, VCE of 25V, and IC of 0.2A. Ideal for amplifier applications, it has a max operating temp of 150 °C and fT of 170MHz in a cylindrical package with through-hole terminals.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Electronic Expediters

USA . 90 parts In-Stock

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SupplyDigital Components

Austria . 6,754 parts In-Stock

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TANS Electronics

Latvia . 6,654 parts In-Stock

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Kulean Microsystems

USA . 3,701 parts In-Stock

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Problanco Electronics

Mexico . 1,827 parts In-Stock

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Corphita

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Corohmni

South Africa . 266 parts In-Stock

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UHIMA Technologies

Türkiye . 134 parts In-Stock

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Overview

Unlock the power of advanced technology with the MPS4126RL by Onsemi. Manufactured by a trusted industry leader, this small signal bipolar junction transistor offers unparalleled quality and reliability. Ideal for amplifier applications, this PNP transistor boasts a high DC current gain and a maximum collector-emitter voltage of 25V. With a nominal transition frequency of 170 MHz, this transistor ensures optimal performance in any project. Experience the value and benefits of the MPS4126RL, designed to exceed your expectations and drive innovation in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing versatility for different circuit designs.

Configuration: SINGLE

Simplifies circuit design and installation, making it easy to use in various amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Package Shape: ROUND

Allows for easy mounting and installation in electronic devices, providing flexibility in circuit design.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 25 V

Can handle relatively high voltages, making it suitable for applications where higher voltage capabilities are needed.

Maximum Collector Current (IC): 0.2 A

Capable of handling moderate amounts of current, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 170 MHz

Provides high frequency performance, ideal for applications requiring fast switching and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4126RL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4126RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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