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MPS404ARL1

Onsemi

MPS404ARL1 by Onsemi

MPS404ARL1 by Onsemi is a PNP BJT transistor with hFE of 30, VCEO of 35V, and IC of 0.15A. Ideal for chopper applications due to its single configuration and through-hole terminals in a cylindrical package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,042 parts In-Stock

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Digiode

USA . 696 parts In-Stock

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696

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SupplyDigital Components

Austria . 7,714 parts In-Stock

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Kulean Microsystems

USA . 6,187 parts In-Stock

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Corphita

USA . 2,208 parts In-Stock

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TANS Electronics

Latvia . 1,097 parts In-Stock

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UHIMA Technologies

Türkiye . 803 parts In-Stock

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Problanco Electronics

Mexico . 711 parts In-Stock

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Corohmni

South Africa . 268 parts In-Stock

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Overview

Discover the powerful performance of the MPS404ARL1 by Onsemi, a top-tier manufacturer known for producing high-quality Small Signal Bipolar Junction Transistors (BJT). This PNP transistor offers exceptional value and benefits for applications such as choppers, thanks to its reliable construction and impressive specifications. With a focus on quality and innovation, Onsemi delivers cutting-edge solutions that meet the needs of customers seeking top-notch electronic components. Upgrade your projects with the MPS404ARL1 and experience the advantages of superior technology in action.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Ensures durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching and amplification applications.

Configuration: SINGLE

Simplified circuit design and easy to integrate into existing systems.

Transistor Application: CHOPPER

Designed specifically for chopper circuits, ensuring optimal performance in this application.

Package Shape: ROUND

Compact and space-saving design for efficient PCB layout.

Terminal Form: THROUGH-HOLE

Easy to solder onto a PCB for secure connections and reliable performance.

No. of Terminals: 3

Simple to connect and integrate into a circuit with minimal terminal connections required.

Package Style (Meter): CYLINDRICAL

Provides a uniform and standardized form factor for easy handling and installation.

Minimum DC Current Gain (hFE): 30

Consistent and reliable amplification of electrical signals for accurate output.

Maximum Collector-Emitter Voltage: 35 V

Suitable for low-voltage applications where a maximum of 35V is required.

Transistor Element Material: SILICON

Silicon transistors offer improved performance and efficiency compared to other materials.

Maximum Collector Current (IC): 0.15 A

Capable of handling a maximum collector current of 0.15A for reliable operation.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures secure connections.

Terminal Position: BOTTOM

Convenient terminal position for easy PCB mounting and connection to other components.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS404ARL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

MPS404ARL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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