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MPS404ARLRM

Onsemi

MPS404ARLRM by Onsemi

MPS404ARLRM by Onsemi is a PNP BJT transistor with hFE of 30, VCEO of 35V, and IC of 0.15A. Ideal for chopper applications due to its single configuration and cylindrical package style. Operates at max temp of 150 °C in through-hole terminals with tin lead finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,956 parts In-Stock

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Vyrian

USA . 1,515 parts In-Stock

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Kulean Microsystems

USA . 7,619 parts In-Stock

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Problanco Electronics

Mexico . 5,926 parts In-Stock

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SupplyDigital Components

Austria . 5,567 parts In-Stock

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TANS Electronics

Latvia . 1,856 parts In-Stock

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Corphita

USA . 1,511 parts In-Stock

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UHIMA Technologies

Türkiye . 471 parts In-Stock

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Corohmni

South Africa . 79 parts In-Stock

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Overview

Unleash the power of innovation with the MPS404ARLRM by Onsemi. Crafted with precision and reliability, this small signal bipolar junction transistor (BJT) offers unparalleled performance in chopper applications. With a maximum collector-emitter voltage of 35V and a minimum DC current gain of 30, this PNP transistor guarantees efficiency and durability. The cylindrical package body material ensures longevity, while the through-hole terminal form simplifies installation. Elevate your projects with the superior quality and value that Onsemi brings to the table. Experience seamless functionality and enhanced performance like never before with the MPS404ARLRM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in applications where high speed and low noise are critical, making this transistor suitable for such applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: CHOPPER

Specifically designed for chopper applications, providing efficient switching and control capabilities.

Package Shape: ROUND

Facilitates easy mounting and handling during the manufacturing process.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto circuit boards, ensuring secure connections.

No. of Terminals: 3

Simplifies the connection process and reduces the chances of wiring errors.

Minimum DC Current Gain (hFE): 30

Ensures consistent and reliable amplification of signals, improving overall performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, making it suitable for demanding industrial applications.

Maximum Collector-Emitter Voltage: 35 V

Provides a high voltage rating, allowing for a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high reliability and performance, making this transistor a reliable choice.

Maximum Collector Current (IC): 0.15 A

Can handle relatively high current levels without overheating, ensuring long-term reliability.

Terminal Finish: TIN LEAD

Provides corrosion resistance and ensures secure electrical connections.

Terminal Position: BOTTOM

Facilitates easy mounting onto circuit boards and ensures proper alignment during installation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS404ARLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

MPS404ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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