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MPS4124ZL1

Onsemi

MPS4124ZL1 by Onsemi

MPS4124ZL1 by Onsemi is a NPN BJT transistor with hFE of 60, fT of 170 MHz, and IC of 0.2 A. Ideal for amplifier applications due to its high transition frequency and low collector-emitter voltage of 25 V. Package style is cylindrical with through-hole terminals.

Median Price

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Lifecycle Status

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2

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< 1k

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Vyrian

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Digiode

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Problanco Electronics

Mexico . 7,024 parts In-Stock

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Kulean Microsystems

USA . 4,348 parts In-Stock

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TANS Electronics

Latvia . 2,675 parts In-Stock

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SupplyDigital Components

Austria . 2,509 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 836 parts In-Stock

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Corohmni

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Overview

Unlock the power of innovation with the MPS4124ZL1 by Onsemi. As a leader in small signal bipolar junction transistors, Onsemi delivers exceptional quality and reliability in every product. Ideal for amplifier applications, this NPN transistor offers a minimum DC current gain of 60, maximum collector-emitter voltage of 25V, and a nominal transition frequency of 170MHz. With a package style of cylindrical and through-hole terminals, the MPS4124ZL1 provides value, efficiency, and performance that exceeds expectations. Enhance your next project with the trusted technology of Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and helps protect the transistor from external damage, increasing its reliability and lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this transistor into various electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

The round shape allows for compact and efficient packaging, making it easier to mount and solder onto circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides a secure and stable connection, reducing the risk of disconnection in electronic circuits.

No. of Terminals: 3

Having 3 terminals allows for flexible and versatile connections in circuit designs, enhancing usability and compatibility.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a standardized form factor for easy integration into various electronic devices and applications.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures efficient signal amplification and stable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures and maintain reliability in demanding environments.

Maximum Collector-Emitter Voltage: 25 V

A maximum collector-emitter voltage of 25V allows for safe operation within specified voltage ranges, preventing damage to the transistor.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and efficiency in electronic devices, ensuring high performance.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2A, this transistor can handle moderate current loads in amplifier circuits without overheating or malfunctioning.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability, making it easy to mount and solder the transistor onto circuit boards.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and ensures efficient heat dissipation, improving overall performance and reliability.

Nominal Transition Frequency (fT): 170 MHz

A nominal transition frequency of 170MHz indicates the speed at which the transistor can switch on and off, critical for high-frequency applications such as amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4124ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4124ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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