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MPS404AZL1

Onsemi

MPS404AZL1 by Onsemi

MPS404AZL1 by Onsemi is a PNP BJT transistor with hFE of 30, VCEO of 35V, and IC of 0.15A. Ideal for chopper applications due to its single configuration and cylindrical package style. Operating temperature up to 150 °C makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 597 parts In-Stock

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Digiode

USA . 423 parts In-Stock

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Problanco Electronics

Mexico . 7,556 parts In-Stock

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Kulean Microsystems

USA . 6,688 parts In-Stock

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TANS Electronics

Latvia . 5,722 parts In-Stock

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SupplyDigital Components

Austria . 2,066 parts In-Stock

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Corphita

USA . 1,854 parts In-Stock

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UHIMA Technologies

Türkiye . 444 parts In-Stock

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Corohmni

South Africa . 430 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the MPS404AZL1 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability. Whether you're working on a chopper application or any other project that requires a PNP transistor, this product is the perfect choice. With a maximum collector-emitter voltage of 35V and a minimum DC current gain of 30, the possibilities are endless. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the MPS404AZL1 brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are known for their high input impedance and fast switching speeds, making them ideal for amplification and switching applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and is easier to troubleshoot, making the transistor a reliable choice.

Transistor Application: CHOPPER

Designed specifically for chopper applications, this transistor ensures efficient and precise control of chopping operations.

Package Shape: ROUND

The round package shape allows for easy mounting and handling, making it convenient for installation in different electronic devices.

No. of Terminals: 3

The three terminals provide the necessary connections for proper functioning, offering flexibility in circuit integration.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, the transistor can withstand demanding environmental conditions.

Maximum Collector-Emitter Voltage: 35 V

The high collector-emitter voltage rating of 35V allows for reliable performance in various voltage applications.

Maximum Collector Current (IC): 0.15 A

The maximum collector current of 0.15A ensures efficient and stable operation in different current-dependent circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS404AZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

MPS404AZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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