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MPS4124RLRA

Onsemi

MPS4124RLRA by Onsemi

MPS4124RLRA by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 25V and max current of 0.2A. With a min DC current gain of 60, it's ideal for amplifier applications due to its high transition frequency of 170MHz. The package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

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$0.066

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$0.055

10k+ parts

$0.049

4,000

-

$0.066

$0.055

$0.049

Distributors (In-Stock)

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Digiode

USA . 1,599 parts In-Stock

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$0.051

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$0.051

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Vyrian

USA . 2,220 parts In-Stock

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$0.054

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2,220

$0.054

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Chip Stock

USA . 21,000 parts In-Stock

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Extreme Components

USA . 1,000 parts In-Stock

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1,000

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Bristol Electronics

USA . 265 parts In-Stock

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$0.113

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265

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Microfarads

USA . 250 parts In-Stock

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250

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Distributors (Availability)

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Corphita

USA . 1,640 parts In-Stock

1+ parts

$0.049

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1,640

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Corohmni

South Africa . 150 parts In-Stock

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$0.054

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150

$0.054

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QUARKTWIN TECHNOLOGY LTD

USA . 11,469 parts In-Stock

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SupplyDigital Components

Austria . 7,462 parts In-Stock

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TANS Electronics

Latvia . 6,854 parts In-Stock

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Kulean Microsystems

USA . 5,399 parts In-Stock

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Problanco Electronics

Mexico . 5,056 parts In-Stock

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UHIMA Technologies

Türkiye . 544 parts In-Stock

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544

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Overview

Upgrade your amplifier circuits with the high-quality MPS4124RLRA Small Signal BJT by Onsemi. Manufactured by a trusted industry leader, this NPN transistor offers reliable performance and excellent thermal capabilities in a convenient through-hole package. Perfect for a wide range of applications, from audio amplification to signal processing, this transistor provides exceptional value and efficiency. Experience enhanced functionality and superior results with the MPS4124RLRA from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures straightforward integration into electronic circuits.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capacity, this transistor can handle power efficiently without overheating or getting damaged.

Maximum Operating Temperature: 150 °C

Capable of operating in a wide temperature range, making it suitable for various environments and applications.

Maximum Collector-Emitter Voltage: 25 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage levels in the circuit.

Minimum DC Current Gain (hFE): 60

Higher DC current gain ensures optimal amplification performance in amplifier circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent performance, reliability, and efficiency in electronic circuits.

Nominal Transition Frequency (fT): 170 MHz

High transition frequency enables fast switching speeds and responsiveness in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS4124RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS4124RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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