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MPS8599RLRMG

Onsemi

MPS8599RLRMG by Onsemi

MPS8599RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. operating temp of 150 °C. Ideal for amplifier applications due to its high transition frequency of 150MHz and max collector-emitter voltage of 80V in a cylindrical package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,245 parts In-Stock

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Digiode

USA . 1,756 parts In-Stock

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Modulus Dynamics

Lithuania . 2,500 parts In-Stock

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$2.012

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$2.012

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$2.012

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$2.012

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$2.012

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AZTECH Wire

Italy . 128 parts In-Stock

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$18.840

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QUARKTWIN TECHNOLOGY LTD

USA . 23,295 parts In-Stock

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SupplyDigital Components

Austria . 5,874 parts In-Stock

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Problanco Electronics

Mexico . 3,514 parts In-Stock

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Kulean Microsystems

USA . 1,886 parts In-Stock

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Corphita

USA . 1,011 parts In-Stock

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TANS Electronics

Latvia . 453 parts In-Stock

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UHIMA Technologies

Türkiye . 148 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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Overview

Experience superior performance with the MPS8599RLRMG by Onsemi, a leading manufacturer known for their high-quality products. This Small Signal Bipolar Junction Transistor (BJT) is designed to amplify signals efficiently, making it ideal for a wide range of applications. From audio amplifiers to electronic circuits, this PNP transistor offers exceptional value, reliability, and precision. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the MPS8599RLRMG and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and resistant to external elements, ensuring the longevity and reliability of the transistor.

Polarity or Channel Type: PNP

The PNP polarity makes this transistor suitable for amplification applications, providing efficient signal amplification in various electronic circuits.

Configuration: SINGLE

The single configuration simplifies the design and implementation of circuits, making it easy to integrate this transistor into different electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high-performance amplification capabilities, making it a reliable choice for audio and RF amplifiers.

Maximum Power Dissipation: 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle moderate power levels without the risk of overheating, ensuring stable and reliable operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to withstand elevated temperatures, making it suitable for use in various electronic devices and environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80V provides a wide voltage tolerance, making this transistor suitable for applications with varying voltage levels.

Nominal Transition Frequency: 150 MHz

With a nominal transition frequency of 150MHz, this transistor offers high-speed switching capabilities, making it ideal for high-frequency applications such as RF amplifiers and oscillators.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS8599RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS8599RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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