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SINGLE Small Signal Bipolar Junction Transistors (BJT) 956

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MSC3930-BT1G by Onsemi

MSC3930-BT1G

Onsemi

MSC3930-BT1G by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a GULL WING terminal form in a small outline package suitable for surface mount assembly.

.03 A

20 V

SINGLE

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

150 MHz

2STX1360 by STMicroelectronics

2STX1360

STMicroelectronics

2STX1360 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, collector current of 3A, and operates up to 150 °C. Ideal for efficient signal processing in compact electronic devices.

3 A

60 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

130 MHz

785 ns

120 ns

MPS4250ARLRMG by Onsemi

MPS4250ARLRMG

Onsemi

MPS4250ARLRMG by Onsemi is a PNP BJT with hFE of 250, VCEO of 40V, and Ptot of 0.625W. Ideal for low-power applications in electronics due to its small size and high gain characteristics. Suitable for use in various electronic circuits requiring a single configuration transistor.

40 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

DZT955-13 by Diodes Incorporated

DZT955-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

140 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

2DA1213O-13 by Diodes Incorporated

2DA1213O-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

50 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

160 MHz

2SA1020G by Onsemi

2SA1020G

Onsemi

2SA1020G by Onsemi is a PNP BJT with max power dissipation of 1.5W, hFE of 40, and max operating temp of 150 °C. Ideal for applications requiring a single configuration transistor with max collector-emitter voltage of 50V, such as amplifiers or signal processing circuits.

2 A

50 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

2SA1020RLRAG by Onsemi

2SA1020RLRAG

Onsemi

2SA1020RLRAG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector current of 2A. It operates up to 150°C, has hFE of at least 40, and fT of 100MHz. Ideal for small signal applications in electronics due to its high performance and reliability.

2 A

50 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

STX790A-AP by STMicroelectronics

STX790A-AP

STMicroelectronics

STX790A-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

NST489AMT1 by Onsemi

NST489AMT1

Onsemi

The Onsemi NST489AMT1 is a NPN BJT transistor with 30V VCEO and 2A IC, ideal for switching applications. It has a hFE of 200, fT of 300MHz, and can handle up to 1.75W power dissipation. With GULL WING terminals in a SMALL OUTLINE package, it operates at temperatures up to 150 °C.

BUILT-IN BIAS RESISTOR RATIO IS

2 A

30 V

SINGLE

200

R-PDSO-G6

e0

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

1.75 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

2SCR514PT100 by ROHM

2SCR514PT100

ROHM

ROHM 2SCR514PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.7A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.

COLLECTOR

.7 A

80 V

SINGLE

120

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

320 MHz

2SCR554PT100 by ROHM

2SCR554PT100

ROHM

ROHM's 2SCR554PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1.5A, ideal for switching applications. With a min. DC current gain of 120 and nominal transition frequency of 300MHz, it offers high performance in a small outline package suitable for surface mount technology.

COLLECTOR

1.5 A

80 V

SINGLE

120

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

STX13004 by STMicroelectronics

STX13004

STMicroelectronics

STX13004 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient signal processing in compact designs.

2 A

400 V

SINGLE

6

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

STX826 by STMicroelectronics

STX826

STMicroelectronics

STX826 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.

3 A

30 V

SINGLE

30

TO-92

O-PBCY-W3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.9 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

ZXTN26070CV-7 by Diodes Incorporated

ZXTN26070CV-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

70 V

SINGLE

75

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

200 MHz

2DA2018-7 by Diodes Incorporated

2DA2018-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;

.5 A

12 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

260 MHz

DSS5240Y-7 by Diodes Incorporated

DSS5240Y-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 2 A;

2 A

40 V

SINGLE

100

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

220 MHz

DSS9110Y-7 by Diodes Incorporated

DSS9110Y-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;

1 A

100 V

SINGLE

125

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2SAR533PT100 by ROHM

2SAR533PT100

ROHM

ROHM 2SAR533PT100 is a PNP BJT transistor with max. power dissipation of 2W, hFE of 180, and max. collector-emitter voltage of 50V. Ideal for switching applications in small outline packages, it operates at up to 150°C with a max. collector current of 3A and transition frequency of 300MHz.

COLLECTOR

3 A

50 V

SINGLE

180

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

2SCR512PT100 by ROHM

2SCR512PT100

ROHM

ROHM 2SCR512PT100 is a NPN BJT transistor with max. collector-emitter voltage of 30V and max. collector current of 2A. It has a min. DC current gain of 200, making it ideal for switching applications at up to 150°C operating temperature. The small outline package with flat terminals and surface mount capability enhances its versatility in various electronic designs.

COLLECTOR

2 A

30 V

SINGLE

200

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

320 MHz

KTC4373O-TP by Micro Commercial Components

KTC4373O-TP

Micro Commercial Components

KTC4373O-TP by Micro Commercial Components is a NPN BJT with hFE of 80, VCE of 120V, and IC of 0.8A. Ideal for small outline applications requiring high transition frequency up to 120MHz in temperatures up to 150°C.

LOW NOISE

.8 A

120 V

SINGLE

80

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

FLAT

SINGLE

10

SILICON

120 MHz

KTC4373Y-TP by Micro Commercial Components

KTC4373Y-TP

Micro Commercial Components

KTC4373Y-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 120V, and fT of 120MHz. Ideal for small signal applications in electronics due to its high gain, low collector current, and fast transition frequency. Suitable for surface mount designs requiring compact outline and high temperature tolerance up to 150°C.

LOW NOISE

.8 A

120 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

FLAT

SINGLE

10

SILICON

120 MHz

2STR1230 by STMicroelectronics

2STR1230

STMicroelectronics

2STR1230 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max collector current of 1.5 A, a voltage rating of 30 V, and operates up to 150 °C. Its surface mount design ensures efficient space utilization in electronic circuits.

1.5 A

30 V

SINGLE

80

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STX715-AP by STMicroelectronics

STX715-AP

STMicroelectronics

STX715-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for efficient circuit designs in compact spaces.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

BC847BLD-7 by Diodes Incorporated

BC847BLD-7

Diodes Incorporated

Diodes Inc. BC847BLD-7 is a NPN BJT with 150 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal amplification in electronic circuits due to its 0.3W Ptot, 0.2A IC, and SOT-23 package with Gull Wing terminals. Suitable for applications requiring high gain and low power consumption in compact designs.

.2 A

45 V

SINGLE

150

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

MMBT5401-D87Z by Onsemi

MMBT5401-D87Z

Onsemi

MMBT5401-D87Z by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 150V and a max collector current of 0.6A. It is commonly used for switching applications due to its high DC current gain (hFE) of 50 and fast nominal transition frequency of 100MHz.

.6 A

150 V

SINGLE

50

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.225 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

FMMT416TA by Diodes Incorporated

FMMT416TA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;

.5 A

8 pF

100 V

SINGLE

100

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

40 MHz

.1 V

NSCT3904LT1G by Onsemi

NSCT3904LT1G

Onsemi

NSCT3904LT1G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.

.2 A

4 pF

40 V

SINGLE

30

TO-236

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

300 MHz

250 ns

70 ns

.3 V

NSCT3904LT3G by Onsemi

NSCT3904LT3G

Onsemi

NSCT3904LT3G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact small outline package style.

.2 A

4 pF

40 V

SINGLE

30

TO-236

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

300 MHz

250 ns

70 ns

.3 V

BC337-25RLRAG by Onsemi

BC337-25RLRAG

Onsemi

BC337-25RLRAG by Onsemi is a NPN BJT transistor with hFE of 160, IC of 0.8A, and fT of 210MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and operating temperature up to 150 °C in a cylindrical package.

.8 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

2SC3624-T1B-A by Renesas Electronics

2SC3624-T1B-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .15 A; No. of Elements: 1;

.15 A

50 V

SINGLE

200

R-PDSO-G3

e6

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN BISMUTH

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC857BL3E6327XTMA1 by Infineon Technologies

BC857BL3E6327XTMA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e4;

LOW NOISE

COLLECTOR

.1 A

45 V

SINGLE

220

R-XBCC-N3

e4

1

1

3

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

PNP

YES

GOLD

NO LEAD

BOTTOM

AMPLIFIER

SILICON

250 MHz

BCP5310H6327XTSA1 by Infineon Technologies

BCP5310H6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

BCP5316H6327XTSA1 by Infineon Technologies

BCP5316H6327XTSA1

Infineon Technologies

BCP5316H6327XTSA1 by Infineon is a PNP BJT with 4 terminals, 2W power dissipation, and 80V collector-emitter voltage. Ideal for amplifier applications, it has a min hFE of 100 and operates up to 150°C. This surface-mount transistor in a small outline package offers high performance with a transition frequency of 125MHz.

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

BCX5316E6433HTMA1 by Infineon Technologies

BCX5316E6433HTMA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSSO-F3;

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

FLAT

SINGLE

SWITCHING

SILICON

125 MHz

BCX5616E6433HTMA1 by Infineon Technologies

BCX5616E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

MMBTA42LT1HTSA1 by Infineon Technologies

MMBTA42LT1HTSA1

Infineon Technologies

Infineon's MMBTA42LT1HTSA1 is a NPN BJT transistor with hFE of 40, VCE of 300V, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and fT of 70MHz.

.5 A

300 V

SINGLE

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

70 MHz

ZXTN4004ZQTA by Diodes Incorporated

ZXTN4004ZQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Terminal Form: FLAT; Package Shape: RECTANGULAR;

HIGH RELIABILITY

COLLECTOR

1 A

150 V

SINGLE

100

R-PSSO-F3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

ZTX751QSTZ by Diodes Incorporated

ZTX751QSTZ

Diodes Incorporated

ZTX751QSTZ by Diodes Inc. is a PNP BJT with 1.5W power dissipation, 100 min hFE, and 2A max IC. Ideal for applications requiring high current amplification in a single configuration at up to 200°C operating temperature.

2 A

SINGLE

100

e3

1

200 Cel

260

PNP

1.5 W

Other Transistors

NO

MATTE TIN

30

100 MHz

APT13003NZTR-G1 by Diodes Incorporated

APT13003NZTR-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

530 V

SINGLE

5

TO-92

O-PBCY-W3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

1 W

MIL-STD-202

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

4 MHz

4150 ns

1000 ns

.4 V

NSVMMBT6517LT1G by Onsemi

NSVMMBT6517LT1G

Onsemi

NSVMMBT6517LT1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.1A, and min. DC current gain of 15. It is used in small outline packages for applications requiring high power dissipation and temp up to 150 °C.

.1 A

350 V

SINGLE

15

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

AEC-Q101

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

40 MHz

2SAR554P5T100 by ROHM

2SAR554P5T100

ROHM

ROHM 2SAR554P5T100 is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1.5A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max fT of 340MHz.

COLLECTOR

1.5 A

15 pF

80 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

TIN

FLAT

SINGLE

10

SWITCHING

SILICON

340 MHz

.4 V

2SCR372P5T100R by ROHM

2SCR372P5T100R

ROHM

ROHM 2SCR372P5T100R is a NPN BJT transistor with hFE of 180, suitable for amplifier applications. It has a max VCE of 120V and IC of 0.7A. With a fT of 220MHz, it operates up to 150°C making it ideal for high-frequency amplification in compact designs.

COLLECTOR

.7 A

120 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

FLAT

SINGLE

10

AMPLIFIER

SILICON

220 MHz

BC857BHZGT116 by ROHM

BC857BHZGT116

ROHM

ROHM BC857BHZGT116 is a PNP BJT transistor with hFE of 210, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package style and Gull Wing terminals for surface mounting. AEC-Q101 certified, suitable for automotive electronics requiring high reliability.

.1 A

45 V

SINGLE

210

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

250 MHz

BCX19HZGT116 by ROHM

BCX19HZGT116

ROHM

ROHM BCX19HZGT116 is a NPN BJT transistor with hFE of 40, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 250MHz. Features Gull Wing terminals in a small outline package suitable for surface mount assembly.

.5 A

45 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

250 MHz

BC860CWH6327 by Infineon Technologies

BC860CWH6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

2SC3324-GR(TE85L,F by Toshiba

2SC3324-GR(TE85L,F

Toshiba

Toshiba's 2SC3324-GR(TE85L,F is a NPN BJT transistor with max power dissipation of 0.15W, min hFE of 200, and max IC of 0.1A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability.

.1 A

SINGLE

200

1

125 Cel

NPN

.15 W

Other Transistors

YES

2SA1162S-GR,LF(D by Toshiba

2SA1162S-GR,LF(D

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): .15 A; Additional Features: LOW NOISE;

LOW NOISE

.15 A

50 V

SINGLE

200

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz

2SA1162S-Y,LF(D by Toshiba

2SA1162S-Y,LF(D

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): .15 A; No. of Terminals: 3;

LOW NOISE

.15 A

50 V

SINGLE

120

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz