Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MSC3930-BT1G
Onsemi
MSC3930-BT1G by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a GULL WING terminal form in a small outline package suitable for surface mount assembly.
.03 A
20 V
SINGLE
70
R-PDSO-G3
e3
1
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
NPN
Not Qualified
YES
Tin (Sn)
GULL WING
DUAL
AMPLIFIER
SILICON
150 MHz
2STX1360
STMicroelectronics
2STX1360 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, collector current of 3A, and operates up to 150 °C. Ideal for efficient signal processing in compact electronic devices.
3 A
60 V
160
TO-92
O-PBCY-T3
150 Cel
ROUND
CYLINDRICAL
1 W
Other Transistors
NO
MATTE TIN
THROUGH-HOLE
BOTTOM
SWITCHING
130 MHz
785 ns
120 ns
MPS4250ARLRMG
MPS4250ARLRMG by Onsemi is a PNP BJT with hFE of 250, VCEO of 40V, and Ptot of 0.625W. Ideal for low-power applications in electronics due to its small size and high gain characteristics. Suitable for use in various electronic circuits requiring a single configuration transistor.
40 V
250
e1
260
PNP
.625 W
TIN SILVER COPPER
DZT955-13
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;
COLLECTOR
4 A
140 V
75
R-PDSO-G4
4
30
2DA1213O-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
2 A
50 V
20
R-PSSO-F3
FLAT
160 MHz
2SA1020G
2SA1020G by Onsemi is a PNP BJT with max power dissipation of 1.5W, hFE of 40, and max operating temp of 150 °C. Ideal for applications requiring a single configuration transistor with max collector-emitter voltage of 50V, such as amplifiers or signal processing circuits.
40
1.5 W
100 MHz
2SA1020RLRAG
2SA1020RLRAG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector current of 2A. It operates up to 150°C, has hFE of at least 40, and fT of 100MHz. Ideal for small signal applications in electronics due to its high performance and reliability.
STX790A-AP
STX790A-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.
30 V
90
.9 W
400 ns
430 ns
NST489AMT1
The Onsemi NST489AMT1 is a NPN BJT transistor with 30V VCEO and 2A IC, ideal for switching applications. It has a hFE of 200, fT of 300MHz, and can handle up to 1.75W power dissipation. With GULL WING terminals in a SMALL OUTLINE package, it operates at temperatures up to 150 °C.
BUILT-IN BIAS RESISTOR RATIO IS
200
R-PDSO-G6
e0
6
235
1.75 W
TIN LEAD
300 MHz
2SCR514PT100
ROHM
ROHM 2SCR514PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.7A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.
.7 A
80 V
120
e2
2 W
TIN COPPER
10
320 MHz
2SCR554PT100
ROHM's 2SCR554PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1.5A, ideal for switching applications. With a min. DC current gain of 120 and nominal transition frequency of 300MHz, it offers high performance in a small outline package suitable for surface mount technology.
1.5 A
STX13004
STX13004 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient signal processing in compact designs.
400 V
O-PBCY-W3
2.5 W
WIRE
STX826
STX826 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.
ZXTN26070CV-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
70 V
R-PDSO-F6
200 MHz
2DA2018-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;
.5 A
12 V
270
.15 W
260 MHz
DSS5240Y-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 2 A;
100
220 MHz
DSS9110Y-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;
1 A
100 V
125
2SAR533PT100
ROHM 2SAR533PT100 is a PNP BJT transistor with max. power dissipation of 2W, hFE of 180, and max. collector-emitter voltage of 50V. Ideal for switching applications in small outline packages, it operates at up to 150°C with a max. collector current of 3A and transition frequency of 300MHz.
180
2SCR512PT100
ROHM 2SCR512PT100 is a NPN BJT transistor with max. collector-emitter voltage of 30V and max. collector current of 2A. It has a min. DC current gain of 200, making it ideal for switching applications at up to 150°C operating temperature. The small outline package with flat terminals and surface mount capability enhances its versatility in various electronic designs.
KTC4373O-TP
Micro Commercial Components
KTC4373O-TP by Micro Commercial Components is a NPN BJT with hFE of 80, VCE of 120V, and IC of 0.8A. Ideal for small outline applications requiring high transition frequency up to 120MHz in temperatures up to 150°C.
LOW NOISE
.8 A
120 V
80
Matte Tin (Sn)
120 MHz
KTC4373Y-TP
KTC4373Y-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 120V, and fT of 120MHz. Ideal for small signal applications in electronics due to its high gain, low collector current, and fast transition frequency. Suitable for surface mount designs requiring compact outline and high temperature tolerance up to 150°C.
2STR1230
2STR1230 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max collector current of 1.5 A, a voltage rating of 30 V, and operates up to 150 °C. Its surface mount design ensures efficient space utilization in electronic circuits.
.5 W
STX715-AP
STX715-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for efficient circuit designs in compact spaces.
50 MHz
BC847BLD-7
Diodes Inc. BC847BLD-7 is a NPN BJT with 150 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal amplification in electronic circuits due to its 0.3W Ptot, 0.2A IC, and SOT-23 package with Gull Wing terminals. Suitable for applications requiring high gain and low power consumption in compact designs.
.2 A
45 V
150
.3 W
MMBT5401-D87Z
MMBT5401-D87Z by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 150V and a max collector current of 0.6A. It is commonly used for switching applications due to its high DC current gain (hFE) of 50 and fast nominal transition frequency of 100MHz.
.6 A
150 V
50
TO-236AB
.225 W
Matte Tin (Sn) - annealed
FMMT416TA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
8 pF
-55 Cel
40 MHz
.1 V
NSCT3904LT1G
NSCT3904LT1G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.
4 pF
TO-236
250 ns
70 ns
.3 V
NSCT3904LT3G
NSCT3904LT3G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact small outline package style.
BC337-25RLRAG
BC337-25RLRAG by Onsemi is a NPN BJT transistor with hFE of 160, IC of 0.8A, and fT of 210MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and operating temperature up to 150 °C in a cylindrical package.
210 MHz
2SC3624-T1B-A
Renesas Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .15 A; No. of Elements: 1;
.15 A
e6
TIN BISMUTH
250 MHz
BC857BL3E6327XTMA1
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e4;
.1 A
220
R-XBCC-N3
e4
UNSPECIFIED
CHIP CARRIER
GOLD
NO LEAD
BCP5310H6327XTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
63
TIN
125 MHz
BCP5316H6327XTSA1
BCP5316H6327XTSA1 by Infineon is a PNP BJT with 4 terminals, 2W power dissipation, and 80V collector-emitter voltage. Ideal for amplifier applications, it has a min hFE of 100 and operates up to 150°C. This surface-mount transistor in a small outline package offers high performance with a transition frequency of 125MHz.
BCX5316E6433HTMA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSSO-F3;
BCX5616E6433HTMA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
MMBTA42LT1HTSA1
Infineon's MMBTA42LT1HTSA1 is a NPN BJT transistor with hFE of 40, VCE of 300V, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and fT of 70MHz.
300 V
AEC-Q101
70 MHz
ZXTN4004ZQTA
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Terminal Form: FLAT; Package Shape: RECTANGULAR;
HIGH RELIABILITY
ZTX751QSTZ
ZTX751QSTZ by Diodes Inc. is a PNP BJT with 1.5W power dissipation, 100 min hFE, and 2A max IC. Ideal for applications requiring high current amplification in a single configuration at up to 200°C operating temperature.
200 Cel
APT13003NZTR-G1
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1.5 A;
530 V
5
MIL-STD-202
4 MHz
4150 ns
1000 ns
.4 V
NSVMMBT6517LT1G
NSVMMBT6517LT1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.1A, and min. DC current gain of 15. It is used in small outline packages for applications requiring high power dissipation and temp up to 150 °C.
350 V
15
2SAR554P5T100
ROHM 2SAR554P5T100 is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1.5A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max fT of 340MHz.
15 pF
340 MHz
2SCR372P5T100R
ROHM 2SCR372P5T100R is a NPN BJT transistor with hFE of 180, suitable for amplifier applications. It has a max VCE of 120V and IC of 0.7A. With a fT of 220MHz, it operates up to 150°C making it ideal for high-frequency amplification in compact designs.
BC857BHZGT116
ROHM BC857BHZGT116 is a PNP BJT transistor with hFE of 210, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package style and Gull Wing terminals for surface mounting. AEC-Q101 certified, suitable for automotive electronics requiring high reliability.
210
BCX19HZGT116
ROHM BCX19HZGT116 is a NPN BJT transistor with hFE of 40, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 250MHz. Features Gull Wing terminals in a small outline package suitable for surface mount assembly.
BC860CWH6327
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
420
2SC3324-GR(TE85L,F
Toshiba
Toshiba's 2SC3324-GR(TE85L,F is a NPN BJT transistor with max power dissipation of 0.15W, min hFE of 200, and max IC of 0.1A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability.
125 Cel
2SA1162S-GR,LF(D
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): .15 A; Additional Features: LOW NOISE;
80 MHz
2SA1162S-Y,LF(D
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): .15 A; No. of Terminals: 3;
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