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2SCR372P5T100R

ROHM

2SCR372P5T100R by ROHM

ROHM 2SCR372P5T100R is a NPN BJT transistor with hFE of 180, suitable for amplifier applications. It has a max VCE of 120V and IC of 0.7A. With a fT of 220MHz, it operates up to 150°C making it ideal for high-frequency amplification in compact designs.

Median Price

$0.766

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$0.218

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Overview

Discover the power of the 2SCR372P5T100R by ROHM, a high-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With its NPN polarity and maximum collector-emitter voltage of 120V, this transistor offers reliable performance in a compact package. ROHM's reputation for excellence ensures that you're getting a top-of-the-line product that delivers exceptional value and benefits. Upgrade your electronic projects with the 2SCR372P5T100R and experience superior quality and reliability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the transistor lightweight and durable, ensuring longevity and ease of handling.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easy to integrate into existing amplifier setups.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during installation.

Package Shape: RECTANGULAR

Rectangular package shape makes it compatible with standard PCB layouts, facilitating easy integration into circuit designs.

No. of Terminals: 3

Three terminals provide the necessary connections for proper functioning in amplifier circuits, ensuring reliable performance.

Terminal Form: FLAT

Flat terminal form allows for secure soldering connections, ensuring stable electrical contact for uninterrupted signal flow.

Minimum DC Current Gain (hFE): 180

High minimum DC current gain ensures stable and consistent amplification in the circuit, delivering reliable performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures reliable performance even under high temperature conditions, making it suitable for a variety of environments.

Maximum Collector-Emitter Voltage: 120 V

High maximum collector-emitter voltage rating allows for safe operation in amplifier circuits with varying voltage levels, preventing damage to the transistor.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and reliability, ensuring optimal performance in amplifier applications.

Maximum Collector Current (IC): 0.7 A

High maximum collector current rating allows for efficient power handling, making it suitable for a wide range of amplifier applications.

Terminal Finish: TIN

TIN terminal finish provides good solderability and corrosion resistance, ensuring secure electrical connections for long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies installation and circuit design, making it easy to integrate into amplifier setups.

Case Connection: COLLECTOR

Collector case connection allows for effective heat dissipation, ensuring the transistor remains cool during operation for stable performance.

Maximum Time At Peak Reflow Temperature (s): 10

Short maximum reflow temperature exposure time prevents thermal damage during assembly, ensuring the transistor's reliability and longevity.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures the transistor can withstand the solder reflow process without damage, ensuring reliable assembly.

Nominal Transition Frequency (fT): 220 MHz

High nominal transition frequency allows for efficient high-frequency signal amplification, making it suitable for a range of amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SCR372P5T100R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SCR372P5T100R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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