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2SCR512P5T100

ROHM

2SCR512P5T100 by ROHM

ROHM 2SCR512P5T100 is a NPN BJT transistor for switching applications. It has VCEsat of 0.4V, hFE of 200, and IC of 2A. With a max operating temperature of 150°C, it's ideal for high-speed switching circuits in small outline packages.

Median Price

$0.267

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Mouser Electronics

USA . 874 parts In-Stock

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$0.670

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$0.267

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$0.178

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$0.133

874

$0.670

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DigiKey

USA . 826 parts In-Stock

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$0.670

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$0.267

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$0.181

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$0.133

826

$0.670

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$0.133

RS (Exports)

UK . 850 parts In-Stock

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$0.183

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Verical

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Farnell

UK . 600 parts In-Stock

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Element14

Singapore . 600 parts In-Stock

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$0.285

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Chip1Stop

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Nova Conductors

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Cyclops Electronics Ltd

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Continental Prestige Electronics

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Argo Parts USA

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CoreStaff

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Allen Electronics Distributors

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Perfect Parts

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Netroflash

USA . 100 parts In-Stock

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$0.139

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Overview

Enhance your electronic projects with the high-quality 2SCR512P5T100 by ROHM. As a leading manufacturer in the industry, ROHM delivers reliable Small Signal Bipolar Junction Transistors like this NPN transistor, ideal for switching applications. With a maximum VCEsat of just 0.4V and a minimum DC current gain of 200, this transistor offers superior performance and efficiency. Whether you're a hobbyist or a professional, the 2SCR512P5T100 provides exceptional value, benefits, and advantages that will take your projects to the next level. Upgrade your circuits today with ROHM's top-notch components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for housing the transistor, ensuring long-term performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SINGLE

Simplifies circuit design and ensures straightforward implementation in various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering high speed and efficiency.

Surface Mount: YES

Facilitates easy and convenient mounting on circuit boards, saving space and simplifying assembly.

Maximum VCEsat: 0.4 V

Low VCEsat indicates minimal power loss during operation, contributing to energy efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on PCBs and easy integration into circuit layouts.

No. of Terminals: 3

Simple three-terminal design for straightforward connectivity in electronic circuits.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capability ensures reliable performance under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Compact small outline package saves board space and supports high-density designs.

Minimum DC Current Gain (hFE): 200

High DC current gain allows for efficient amplification and signal processing in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliable performance in diverse environmental conditions.

Maximum Collector-Base Capacitance: 10 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 30 V

Sufficient collector-emitter voltage rating for a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon-based transistor element offers high performance, reliability, and compatibility with modern electronic systems.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling larger currents in the circuit.

Terminal Finish: TIN

TIN terminal finish ensures good solderability and reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and handling during circuit assembly.

Case Connection: COLLECTOR

Collector connection allows for efficient heat dissipation and improved thermal performance.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time ensures quick and efficient soldering process during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints and robust mechanical connections.

Nominal Transition Frequency (fT): 320 MHz

High transition frequency enables fast signal processing and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SCR512P5T100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

10 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SCR512P5T100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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