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2SCR513PT100

ROHM

2SCR513PT100 by ROHM

ROHM 2SCR513PT100 is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 1A. It has a min. DC current gain of 180, suitable for switching applications at up to 150°C operating temperature. The small outline package with flat terminals makes it ideal for surface mount designs requiring high transition frequency of 360MHz.

Median Price

$0.476

Lifecycle Status

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9

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DigiKey

USA . 475 parts In-Stock

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$0.850

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$0.341

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Adafruit Industries

USA . 3,000 parts In-Stock

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$1.653

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$1.504

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$1.355

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Verical

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Chip1Stop

Japan . 5,193 parts In-Stock

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Master Electronics

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Bristol Electronics

USA . 469 parts In-Stock

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$0.337

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Dan-Mar Components

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Semtec, LLC

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ACDS - Activité Composants Distribution Service

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Corohmni

South Africa . 259 parts In-Stock

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$0.228

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CoreStaff

Japan . 3,000 parts In-Stock

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$0.266

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$0.158

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$0.104

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Component Stockers USA

USA . 24 parts In-Stock

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$0.310

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$0.140

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$0.110

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.504

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$1.355

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

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Perfect Parts

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Overview

Unleash the power of innovation with the ROHM 2SCR513PT100, a top-quality NPN Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by industry leader ROHM, this transistor offers unparalleled reliability and performance in a compact, surface-mount package. With a maximum collector-emitter voltage of 50 V and a peak transition frequency of 360 MHz, this transistor is ideal for a wide range of electronic devices. Experience the difference with ROHM and elevate your projects to new heights of efficiency and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatile functionality.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape provides easy placement and mounting on PCBs.

Terminal Form: FLAT

Flat terminals ensure secure and stable connections within the circuit.

No. of Terminals: 3

Three terminals offer straightforward connections in circuit designs.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capability allows the transistor to handle higher loads without overheating.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and enhances the overall design efficiency.

Minimum DC Current Gain (hFE): 180

High DC current gain ensures reliable and stable amplification of signals.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the transistor suitable for various environments and applications.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage capability allows for handling higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 1 A

High collector current rating enables the transistor to handle significant loads in the circuit.

Terminal Finish: TIN COPPER

Tin copper finish offers good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and layout.

Case Connection: COLLECTOR

Collector case connection type facilitates efficient heat dissipation and circuit design.

Maximum Time At Peak Reflow Temperature (s): 10

Short peak reflow time ensures component integrity during assembly processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for reliable soldering and assembly of the transistor.

Nominal Transition Frequency (fT): 360 MHz

High transition frequency enables fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SCR513PT100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SCR513PT100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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