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2SCR514PT100

ROHM

2SCR514PT100 by ROHM

ROHM 2SCR514PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.7A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.

Median Price

$0.152

Lifecycle Status

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DigiKey

USA . 269 parts In-Stock

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Chip1Stop

Japan . 4,765 parts In-Stock

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Verical

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VNN

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Nova Conductors

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Ampacity Inc.

Singapore . 741 parts In-Stock

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CoreStaff

Japan . 433 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Kepictronics

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Lucentia Tech

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Aranea Global

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Overview

Unlock the power of innovation with the 2SCR514PT100 by ROHM. As a leading manufacturer in the industry, ROHM delivers top-quality Small Signal Bipolar Junction Transistors that excel in switching applications. With a maximum power dissipation of 2W and a minimum DC current gain of 120, this NPN transistor offers exceptional performance and reliability. Whether you're looking to enhance your electronic projects or streamline your designs, the 2SCR514PT100 provides the value, benefits, and advantages you need to succeed. Experience the difference with ROHM today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into circuits and offers versatile functionality for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in tasks that require fast switching capabilities.

Surface Mount: YES

Being surface mountable makes it easier to mount the transistor on PCBs, saving space and enabling automated production processes.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space on the PCB and makes it easy to place and solder.

Terminal Form: FLAT

The flat terminal form simplifies the soldering process and ensures a secure connection for stable performance.

No. of Terminals: 3

With 3 terminals, this transistor offers standard connections for easy integration into circuits.

Maximum Power Dissipation (Abs): 2 W

The high maximum power dissipation allows the transistor to handle high power levels without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and enables compact circuit designs.

Minimum DC Current Gain (hFE): 120

The high minimum DC current gain ensures stable and predictable amplification performance in various circuit applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows the transistor to handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material for the transistor element ensures high performance, reliability, and durability for long-term use.

Maximum Collector Current (IC): 0.7 A

The high maximum collector current rating allows the transistor to handle high current loads, making it suitable for various applications.

Terminal Finish: TIN COPPER

The tin copper terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and ensures easy connections for efficient operation.

Case Connection: COLLECTOR

The collector case connection offers easy and efficient heat dissipation, ensuring the transistor operates at optimal temperatures.

Maximum Time At Peak Reflow Temperature (s): 10

The short maximum time at peak reflow temperature ensures that the transistor is not subjected to high temperatures for extended periods, preventing damage.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the transistor can withstand the soldering process without damage, ensuring reliable connections.

Nominal Transition Frequency (fT): 320 MHz

The high nominal transition frequency allows the transistor to operate at high frequencies, making it suitable for RF and high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SCR514PT100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SCR514PT100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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