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2SCR514P5T100

ROHM

2SCR514P5T100 by ROHM

ROHM 2SCR514P5T100 is a NPN BJT transistor with hFE of 120, VCE of 80V, and fT of 320MHz. Ideal for switching applications due to its small outline package style and high collector current capability of 0.7A. Suitable for surface mount designs requiring fast switching speeds in compact electronic devices.

Median Price

$0.376

Lifecycle Status

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13

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1k+

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Newark

USA . 1,315 parts In-Stock

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$0.486

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$0.219

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$0.129

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$0.486

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DigiKey

USA . 1,449 parts In-Stock

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$0.620

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$0.247

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$0.167

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$0.122

1,449

$0.620

$0.247

$0.167

$0.122

Mouser Electronics

USA . 820 parts In-Stock

1+ parts

$0.620

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$0.247

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$0.166

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$0.121

820

$0.620

$0.247

$0.166

$0.121

Verical

USA . 2,600 parts In-Stock

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$0.608

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$0.608

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Farnell

UK . 1,315 parts In-Stock

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$0.139

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$0.089

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$0.080

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Element14

Singapore . 1,315 parts In-Stock

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$0.266

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$0.200

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$0.161

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Chip1Stop

Japan . 1,000 parts In-Stock

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$0.179

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$0.132

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$0.179

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RS (Exports)

UK . 300 parts In-Stock

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$0.109

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$0.159

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$0.144

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VNN

France . 1,762 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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$0.274

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$0.164

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350

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Dan-Mar Components

USA . 350 parts In-Stock

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350

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HZD GmbH

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Nova Conductors

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Ampacity Inc.

Singapore . 1,551 parts In-Stock

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$0.202

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CoreStaff

Japan . 403 parts In-Stock

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$0.974

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$0.233

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$0.156

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403

$0.974

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Argo Parts USA

USA . 5,273 parts In-Stock

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RC Electronics

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Continental Prestige Electronics

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Aranea Global

USA . 100 parts In-Stock

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Overview

Upgrade your electronic projects with the 2SCR514P5T100 by ROHM, a Small Signal Bipolar Junction Transistor that guarantees high quality and reliability. Manufactured by industry leader ROHM, this NPN transistor is perfect for switching applications. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 120, this transistor provides exceptional performance. Whether you're a hobbyist or a professional, this product offers value, efficiency, and versatility, making it a must-have component for your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors allow for electron flow, making them suitable for a wide range of electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and efficiency in such tasks.

Surface Mount: YES

Surface mount design allows for easy integration into modern electronics and compact circuit layouts.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy mounting and assembly in electronic devices.

Terminal Form: FLAT

Flat terminals ensure secure connections and stable performance in circuit applications.

No. of Terminals: 3

Three terminals provide necessary connections for input, output, and power in a compact package.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for high-density mounting on PCBs.

Minimum DC Current Gain (hFE): 120

High minimum DC current gain ensures reliable and consistent amplification in signal processing applications.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating allows for safe operation in a wide range of voltage conditions.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability, making it a preferred choice for transistors.

Maximum Collector Current (IC): 0.7 A

High maximum collector current rating allows for handling of moderate power levels in switching applications.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and solderability for reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connections, reducing complexity in design.

Case Connection: COLLECTOR

Collector case connection simplifies heat dissipation and electrical connections in circuit designs.

Maximum Time At Peak Reflow Temperature (s): 10

Short maximum time at peak reflow temperature ensures thermal stability and reliability during assembly processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for robust soldering and assembly processes without compromising performance.

Nominal Transition Frequency (fT): 320 MHz

High nominal transition frequency indicates fast response and switching speed, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SCR514P5T100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SCR514P5T100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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