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2SCR512PFRAT100

ROHM

2SCR512PFRAT100 by ROHM

ROHM's 2SCR512PFRAT100 is a NPN BJT transistor with hFE of 200, VCE of 30V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 320MHz.

Median Price

$0.306

Lifecycle Status

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1k+

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Nova Conductors

Japan . 15 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 1,000 parts In-Stock

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$0.411

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Dan-Mar Components

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Argo Parts USA

USA . 2,970 parts In-Stock

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Continental Prestige Electronics

USA . 850 parts In-Stock

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AZTECH Wire

Italy . 831 parts In-Stock

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$14.916

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Ampacity Inc.

Singapore . 664 parts In-Stock

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$63.050

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Overview

Elevate your electronic designs with the 2SCR512PFRAT100 by ROHM, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by the industry-leading ROHM, this NPN transistor is perfect for switching applications and offers a minimum DC current gain of 200 and a maximum collector-emitter voltage of 30V. With a compact package style and surface mount option, this transistor provides reliability and performance in a wide range of circuit designs. Trust ROHM for superior quality components that deliver exceptional value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile for various electronic applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to interface with other components.

Transistor Application: SWITCHING

Optimized for switching applications, offering fast response times and efficient performance.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Package Shape: RECTANGULAR

Compact shape saves space on the PCB and allows for efficient component placement.

Minimum DC Current Gain (hFE): 200

High gain ensures stable and reliable amplification of current.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low to medium voltage applications.

Maximum Collector Current (IC): 2 A

Capable of handling moderate current levels, making it versatile for various applications.

Terminal Position: SINGLE

Simplifies circuit layout and connections.

Case Connection: COLLECTOR

Clear connection point for easy integration into circuits.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes, ensuring reliable assembly.

Nominal Transition Frequency (fT): 320 MHz

High transition frequency enables fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SCR512PFRAT100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSSO-F3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SCR512PFRAT100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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