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2SCR372PHZGT100Q

ROHM

2SCR372PHZGT100Q by ROHM

ROHM 2SCR372PHZGT100Q is a NPN BJT transistor with VCEsat of 0.3V, hFE of 120, and IC of 0.7A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 220MHz. AEC-Q101 certified for automotive use, operating up to 150°C.

Median Price

$0.670

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Mouser Electronics

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$0.494

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$0.355

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$0.265

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Verical

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Chip1Stop

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$0.340

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VNN

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Ampacity Inc.

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CoreStaff

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Overview

Unlock the power of reliable and high-quality signal amplification with the 2SCR372PHZGT100Q by ROHM. As one of the leading manufacturers in the industry, ROHM delivers exceptional performance and durability in their small signal bipolar junction transistors. Ideal for amplifier applications, this NPN transistor offers a maximum VCEsat of 0.3V and a minimum DC current gain of 120, ensuring optimal functionality. With a maximum power dissipation of 2W and a maximum collector-emitter voltage of 120V, this transistor is designed to meet your needs with precision. Trust ROHM to provide you with top-notch quality and performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other electronic circuits, making this transistor versatile and compatible with many applications.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards, saving space and reducing manufacturing costs.

Maximum VCEsat: 0.3 V

Low saturation voltage results in minimal power loss, making the transistor energy efficient.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and secure in place on a circuit board.

Terminal Form: FLAT

Flat terminals provide a stable and solid connection, reducing the risk of disconnection or malfunction.

No. of Terminals: 3

Simple layout with three terminals for easy connection and compatibility with common circuit designs.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capability allows the transistor to handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on circuit boards and allows for denser designs.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures reliable amplification of signals with minimal distortion.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function reliably in various environmental conditions.

Maximum Collector-Base Capacitance: 8 pF

Low capacitance helps to reduce signal distortion and improves overall performance.

Maximum Collector-Emitter Voltage: 120 V

High voltage rating allows the transistor to withstand high voltages in demanding applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the transistor.

Maximum Collector Current (IC): 0.7 A

High collector current rating allows the transistor to handle larger currents, making it suitable for a variety of applications.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections, reducing the risk of errors.

Case Connection: COLLECTOR

Case connected to the collector for easy heat sinking and thermal management.

Reference Standard: AEC-Q101

Compliance with automotive electronic council standards ensures high quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 220 MHz

High transition frequency allows for fast switching speeds and better high-frequency performance in amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SCR372PHZGT100Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SCR372PHZGT100Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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