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2SCR512PHZGT100

ROHM

2SCR512PHZGT100 by ROHM

ROHM 2SCR512PHZGT100 is a NPN BJT transistor with VCEsat of 0.4V, hFE of 200, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 certification and high fT of 320MHz. Package: PLASTIC/EPOXY, RECTANGULAR shape, suitable for surface mount with 3 terminals.

Median Price

$0.680

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Newark

USA . 8 parts In-Stock

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$0.680

100+ parts

$0.375

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$0.251

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8

$0.680

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Mouser Electronics

USA . 452 parts In-Stock

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$0.980

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$0.397

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$0.275

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452

$0.980

$0.397

$0.275

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DigiKey

USA . 326 parts In-Stock

1+ parts

$0.980

100+ parts

$0.397

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$0.276

10k+ parts

$0.208

326

$0.980

$0.397

$0.276

$0.208

Verical

USA . 1,000 parts In-Stock

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$0.960

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$0.960

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Farnell

UK . 908 parts In-Stock

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$0.286

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$0.180

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$0.169

908

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$0.286

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$0.169

Element14

Singapore . 908 parts In-Stock

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$0.342

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$0.243

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$0.235

908

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$0.342

$0.243

$0.235

Chip1Stop

Japan . 340 parts In-Stock

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$0.376

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$0.261

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340

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$0.376

$0.261

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Distributors (In-Stock)

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Nova Conductors

Japan . 47 parts In-Stock

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$0.249

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Chip Stock

USA . 2,950 parts In-Stock

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VNN

France . 2,483 parts In-Stock

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IBS Electronics

USA . 2,000 parts In-Stock

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$0.281

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ACDS - Activité Composants Distribution Service

France . 982 parts In-Stock

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Vyrian

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Distributors (Availability)

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Ampacity Inc.

Singapore . 716 parts In-Stock

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$0.243

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Argo Parts USA

USA . 2,514 parts In-Stock

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$0.249

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$0.242

2,514

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CoreStaff

Japan . 982 parts In-Stock

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$0.647

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$0.205

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$0.166

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982

$0.647

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.244

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$0.237

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$0.232

1,000

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$0.244

$0.237

$0.232

Continental Prestige Electronics

USA . 908 parts In-Stock

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$0.259

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$0.152

10k+ parts

$0.146

908

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$0.259

$0.152

$0.146

Overview

Discover the power of the 2SCR512PHZGT100 by ROHM, a top-quality NPN Small Signal Bipolar Junction Transistor designed for reliable switching applications. With a maximum VCEsat of just 0.4V and a high DC current gain of 200, this transistor offers superior performance in a compact, surface-mount package. Whether you're working on automotive electronics or industrial controls, ROHM's innovative technology ensures optimal efficiency and durability. Trust ROHM for cutting-edge solutions that deliver exceptional value and performance for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and low noise operation.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count, making it easier to integrate into different systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in on/off control circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing overall system size.

Maximum VCEsat: 0.4 V

Low VCEsat ensures minimal power loss and high efficiency in switching operations, improving overall performance.

Package Shape: RECTANGULAR

Rectangular package shape offers easy handling and mounting options, making it suitable for automated assembly processes.

Terminal Form: FLAT

Flat terminals ensure secure connections and ease of soldering, providing reliable electrical contact in a wide range of applications.

No. of Terminals: 3

Three terminals allow for easy connection and versatile usage in a variety of circuit configurations, offering flexibility in design.

Maximum Power Dissipation (Abs): 2 W

High power dissipation handling capability ensures the transistor can handle demanding applications without overheating or performance degradation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact electronic devices where size is a critical factor.

Minimum DC Current Gain (hFE): 200

High DC current gain provides stable amplification and overall performance in various circuit configurations, ensuring reliable operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for use in harsh environments, ensuring reliable performance under varying temperature conditions.

Maximum Collector-Base Capacitance: 10 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance, making this transistor suitable for high-speed switching applications.

Maximum Collector-Emitter Voltage: 30 V

High collector-emitter voltage rating offers flexibility in circuit design and operation, ensuring the transistor can handle various voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon material provides high reliability, temperature stability, and consistent performance, making it a preferred choice for semiconductor devices.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling of higher current loads, making this transistor suitable for applications requiring high power output.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and connection, offering ease of use and compatibility with standard mounting practices.

Case Connection: COLLECTOR

Collector case connection provides efficient heat dissipation and easy mounting options, ensuring reliable operation and long-term performance.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 automotive reliability standard ensures quality, durability, and performance consistency in demanding automotive applications.

Nominal Transition Frequency (fT): 320 MHz

High transition frequency allows for high-speed operation and improved switching performance, making this transistor suitable for fast switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SCR512PHZGT100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

10 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SCR512PHZGT100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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