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2SCR522EBTL

ROHM

2SCR522EBTL by ROHM

ROHM 2SCR522EBTL is a NPN BJT transistor with max. collector current of 0.2A and min. DC current gain of 120. It's used for switching applications, operates at max. temp of 150°C, and has a transition frequency of 400MHz suitable for small outline packages.

Median Price

$0.170

Lifecycle Status

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Mouser Electronics

USA . 6,919 parts In-Stock

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$0.170

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$0.063

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$0.040

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$0.024

6,919

$0.170

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$0.040

$0.024

DigiKey

USA . 4,262 parts In-Stock

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$0.170

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$0.063

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$0.040

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$0.027

4,262

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$0.063

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$0.027

Chip1Stop

Japan . 5,780 parts In-Stock

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$0.034

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$0.026

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$0.026

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Element14

Singapore . 2,991 parts In-Stock

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$41.000

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Verical

USA . 2,640 parts In-Stock

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ACDS - Activité Composants Distribution Service

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VNN

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Nova Conductors

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Ampacity Inc.

Singapore . 4,249 parts In-Stock

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$0.016

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Corohmni

South Africa . 94 parts In-Stock

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CoreStaff

Japan . 2,791 parts In-Stock

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$0.116

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$0.045

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$0.026

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$1.756

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$1.598

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$1.440

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RC Electronics

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Overview

Discover the ROHM 2SCR522EBTL, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by ROHM, this NPN transistor offers reliability and performance. With its compact size and high DC current gain, the 2SCR522EBTL is perfect for various electronic projects. Benefit from its maximum operating temperature of 150°C and maximum collector current of 0.2A. Trust ROHM for premium components that deliver exceptional value and efficiency for all your circuit needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this transistor into electronics projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control current flow in electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and reducing production costs.

Package Shape: RECTANGULAR

Rectangular package shape is standard and easy to handle during manufacturing and testing processes.

Terminal Form: FLAT

Flat terminals provide a stable connection and facilitate soldering during assembly, ensuring proper functionality.

No. of Terminals: 3

Three terminals allow for control of current flow through the transistor, enabling versatile circuit configurations.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation ensures efficient operation and helps prevent overheating of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and makes this transistor suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures amplification of weak signals and improves the transistor's performance in signal processing applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 20 V

Sufficient collector-emitter voltage rating enables this transistor to handle moderate voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and ensures stable performance of the transistor over time.

Maximum Collector Current (IC): 0.2 A

High collector current rating allows this transistor to handle relatively high current loads in electronic circuits.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance for long-lasting connections in electronic assemblies.

Terminal Position: DUAL

Dual terminal position enables flexible mounting options and simplifies PCB layout in circuit design.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time helps prevent damage to the transistor during soldering processes and ensures proper functionality.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for reliable soldering of the transistor onto the PCB during assembly.

Nominal Transition Frequency (fT): 400 MHz

High nominal transition frequency makes this transistor suitable for high-frequency applications such as RF communication circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SCR522EBTL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SCR522EBTL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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