Loading...

BC337-25RLRAG

Onsemi

BC337-25RLRAG by Onsemi

BC337-25RLRAG by Onsemi is a NPN BJT transistor with hFE of 160, IC of 0.8A, and fT of 210MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and operating temperature up to 150 °C in a cylindrical package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,344 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,344

-

-

-

-

Digiode

USA . 1,888 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,888

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 159 parts In-Stock

1+ parts

$7.795

100+ parts

-

1k+ parts

-

10k+ parts

-

159

$7.795

-

-

-

Northwest PG Solutions

USA . 553 parts In-Stock

1+ parts

$8.575

100+ parts

$7.717

1k+ parts

-

10k+ parts

-

553

$8.575

$7.717

-

-

AZTECH Wire

Italy . 1,176 parts In-Stock

1+ parts

$12.540

100+ parts

-

1k+ parts

-

10k+ parts

-

1,176

$12.540

-

-

-

TANS Electronics

Latvia . 7,527 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,527

-

-

-

-

SupplyDigital Components

Austria . 7,407 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,407

-

-

-

-

Kulean Microsystems

USA . 7,037 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,037

-

-

-

-

Problanco Electronics

Mexico . 5,062 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,062

-

-

-

-

Corphita

USA . 596 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

596

-

-

-

-

Corohmni

South Africa . 492 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

492

-

-

-

-

UHIMA Technologies

Türkiye . 313 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

313

-

-

-

-

Overview

Discover the BC337-25RLRAG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that excels in amplifier applications. With a maximum collector-emitter voltage of 45V and a minimum DC current gain of 160, this NPN transistor offers exceptional performance and reliability. Manufactured by Onsemi, known for their cutting-edge technology and superior products, the BC337-25RLRAG provides customers with unmatched value and benefits. Trust Onsemi for all your transistor needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and offer high gain and fast switching speed, making them ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use this transistor in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and assembly in a wide range of electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals enable easy and secure soldering connections, improving reliability in circuit connections.

No. of Terminals: 3

Three terminals provide necessary connections for the transistor to function effectively in amplifier circuits.

Maximum Power Dissipation (Abs): 0.625 W

High maximum power dissipation allows the transistor to handle demanding applications without overheating or breaking down.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the transistor can operate reliably in various environmental conditions without performance degradation.

Maximum Collector-Emitter Voltage: 45 V

High maximum collector-emitter voltage rating provides ample headroom for voltage spikes and fluctuations in the circuit.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance consistency, making it a popular choice for transistors in electronic circuits.

Maximum Collector Current (IC): 0.8 A

High maximum collector current rating allows the transistor to handle larger currents, making it suitable for amplifier applications with higher power requirements.

Terminal Finish: TIN SILVER COPPER

Tin, silver, and copper terminal finish provides good conductivity and corrosion resistance, ensuring stable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering of the transistor in circuit boards, enhancing ease of use and assembly.

Nominal Transition Frequency (fT): 210 MHz

High nominal transition frequency indicates fast switching speed and high-frequency performance, making this transistor suitable for amplifier applications requiring high frequencies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC337-25RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC337-25RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20