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BC337-40-AP

STMicroelectronics

BC337-40-AP by STMicroelectronics

BC337-40-AP by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 250, and max. collector-emitter voltage of 45V. It is commonly used for switching applications due to its single configuration and cylindrical package style with through-hole terminals.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.032

60,000

-

-

-

$0.032

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 90 parts In-Stock

1+ parts

$0.144

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-

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90

$0.144

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Vyrian

USA . 36,509 parts In-Stock

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36,509

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VNN

France . 33,403 parts In-Stock

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33,403

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Digiode

USA . 3,279 parts In-Stock

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3,279

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Anansix

USA . 683 parts In-Stock

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683

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Distributors (Availability)

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Ampacity Inc.

Singapore . 36,998 parts In-Stock

1+ parts

$0.027

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-

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36,998

$0.027

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Semicontronic

India . 36,954 parts In-Stock

1+ parts

$0.027

100+ parts

$0.026

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$0.026

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-

36,954

$0.027

$0.026

$0.026

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Continental Prestige Electronics

USA . 5,201 parts In-Stock

1+ parts

$0.144

100+ parts

-

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-

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$0.141

5,201

$0.144

-

-

$0.141

Argo Parts USA

USA . 4,672 parts In-Stock

1+ parts

$0.144

100+ parts

-

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-

10k+ parts

$0.139

4,672

$0.144

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-

$0.139

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.144

100+ parts

$0.141

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-

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-

2,000

$0.144

$0.141

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Modulus Dynamics

Lithuania . 62 parts In-Stock

1+ parts

$0.159

100+ parts

$0.158

1k+ parts

$0.153

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-

62

$0.159

$0.158

$0.153

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Corohmni

South Africa . 25 parts In-Stock

1+ parts

$1.483

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25

$1.483

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IDEA Electronic Components Group

UK . 1,457 parts In-Stock

1+ parts

$1.608

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$1.447

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1,457

$1.608

-

$1.447

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Aztec Data Supply Inc.

USA . 175 parts In-Stock

1+ parts

$1.822

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175

$1.822

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$2.022

100+ parts

$1.921

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$1.921

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-

2,000

$2.022

$1.921

$1.921

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MKK Technologies

India . 1,717 parts In-Stock

1+ parts

$3.024

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1,717

$3.024

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DigiPath Technology Company

USA . 1,717 parts In-Stock

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$3.024

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1,717

$3.024

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Perfect Parts

USA . 35,589 parts In-Stock

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35,589

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QUARKTWIN TECHNOLOGY LTD

USA . 19,795 parts In-Stock

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19,795

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Corphita

USA . 3,229 parts In-Stock

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3,229

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Robosynatics

Brazil . 450 parts In-Stock

1+ parts

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$0.096

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$0.096

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$0.096

450

-

$0.096

$0.096

$0.096

Lucentia Tech

USA . 450 parts In-Stock

1+ parts

-

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$0.096

1k+ parts

$0.096

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$0.096

450

-

$0.096

$0.096

$0.096

Parana Technologies

USA . 339 parts In-Stock

1+ parts

-

100+ parts

$1.923

1k+ parts

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339

-

$1.923

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Overview

Unlock the power of high-quality Small Signal Bipolar Junction Transistors with the BC337-40-AP by STMicroelectronics. Designed for switching applications, this NPN transistor offers reliable performance and a maximum collector-emitter voltage of 45V. With a minimum DC current gain of 250, this transistor ensures efficient operation in a compact cylindrical package. Trust in STMicroelectronics' reputation for excellence and elevate your electronic projects with the BC337-40-AP's superior reliability and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for reliable performance.

Polarity or Channel Type: NPN

Common and versatile configuration for various applications.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: SWITCHING

Ideal for high-speed switching operations.

Package Shape: ROUND

Compact design for space-saving installations.

Terminal Form: THROUGH-HOLE

Easy to solder and secure in place.

No. of Elements: 1

Simple and straightforward transistor operation.

No. of Terminals: 3

Standard connection points for easy setup.

Maximum Power Dissipation (Abs): 0.625 W

Handles moderate power levels efficiently.

Package Style (Meter): CYLINDRICAL

Space-efficient design for compact applications.

Minimum DC Current Gain (hFE): 250

Ensures consistent amplification in circuits.

Maximum Operating Temperature: 150 °C

Can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 45 V

Suitable for low to moderate voltage applications.

Transistor Element Material: SILICON

Reliable and durable material for long-term use.

Maximum Collector Current (IC): 0.5 A

Handles moderate current levels effectively.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-lasting connections.

Terminal Position: BOTTOM

Easy to mount and connect in circuits.

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency operations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC337-40-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC337-40-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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