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MMBT5401-D87Z

Onsemi

MMBT5401-D87Z by Onsemi

MMBT5401-D87Z by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 150V and a max collector current of 0.6A. It is commonly used for switching applications due to its high DC current gain (hFE) of 50 and fast nominal transition frequency of 100MHz.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 100,000 parts In-Stock

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-

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$0.041

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$0.034

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$0.030

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$0.041

$0.034

$0.030

Verical

USA . 100,000 parts In-Stock

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$0.038

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$0.038

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Nova Conductors

Japan . 800 parts In-Stock

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$0.030

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800

$0.030

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Digiode

USA . 606 parts In-Stock

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$0.032

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Chip Stock

USA . 49,000 parts In-Stock

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49,000

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Vyrian

USA . 9,963 parts In-Stock

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Anansix

USA . 346 parts In-Stock

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Corohmni

South Africa . 413 parts In-Stock

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$0.029

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413

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Ampacity Inc.

Singapore . 299,039 parts In-Stock

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$0.029

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Netroflash

USA . 4,100 parts In-Stock

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$0.030

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$0.028

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$0.028

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$0.030

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$0.028

Corphita

USA . 2,838 parts In-Stock

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$0.031

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AZTECH Wire

Italy . 634 parts In-Stock

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$18.490

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Continental Prestige Electronics

USA . 100,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,254 parts In-Stock

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SupplyDigital Components

Austria . 6,952 parts In-Stock

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Kulean Microsystems

USA . 6,873 parts In-Stock

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Problanco Electronics

Mexico . 5,571 parts In-Stock

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TANS Electronics

Latvia . 2,914 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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Overview

Discover the power of the MMBT5401-D87Z by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With its PNP polarity and single configuration, this transistor offers incredible performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, you can expect nothing but the best. Whether you're working on industrial projects or tinkering with electronics at home, this surface-mount transistor is a game-changer. Its compact package shape and gull-wing terminals make installation effortless. Experience the advantages of its maximum collector-emitter voltage of 150V and maximum collector current of 0.6A, allowing for efficient power dissipation. Don't settle for less when you can have the MMBT5401-D87Z - a versatile and reliable solution that truly delivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it resistant to breakage and suitable for various application environments.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits for switching applications, providing reliable and efficient operation.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, making it easier to implement and reducing overall costs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and low power consumption, making it ideal for use in electronic devices.

Surface Mount: YES

The surface mount capability allows for easy installation on PCBs, saving space and improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape enables efficient packing and stacking of transistors, optimizing space utilization on PCBs.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable solder connections, ensuring consistent performance and ease of assembly.

No. of Elements: 1

With a single element, this transistor simplifies circuit design and reduces the risk of component failure, enhancing overall reliability.

No. of Terminals: 3

The three terminals enable easy integration into circuitry and facilitate proper connections for efficient operation.

Maximum Power Dissipation (Abs): 0.225 W

This high power dissipation capability allows the transistor to handle significant power levels, ensuring reliable operation even in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style provides compactness and efficient use of space on PCBs, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 50

With a minimum hFE value of 50, this transistor offers consistent amplification capabilities, ensuring accurate signal processing.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand elevated temperature environments without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 150 V

This high voltage rating enables the transistor to handle substantial voltage levels, making it suitable for various applications requiring voltage control.

Transistor Element Material: SILICON

The silicon material used in the transistor element ensures reliable and consistent performance, providing excellent electrical characteristics.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 A, this transistor can handle significant current without overheating or compromising performance.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin annealed terminal finish offers excellent solderability, ensuring strong and reliable connections during assembly.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout and connection options, accommodating various circuit designs and configurations.

Moisture Sensitivity Level (MSL): 1

With an MSL rating of 1, this transistor is highly resistant to moisture-induced damage, ensuring long-term reliability and performance.

Maximum Time At Peak Reflow Temperature (s): 30

The high maximum time at the peak reflow temperature provides flexibility during assembly, allowing for efficient soldering and reducing the risk of thermal damage.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and component adhesion, resulting in reliable performance under challenging environmental conditions.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor offers excellent high-frequency performance, making it suitable for applications requiring fast signal switching and response.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT5401-D87Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBT5401-D87Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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