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NSVMMBT6517LT1G

Onsemi

NSVMMBT6517LT1G by Onsemi

NSVMMBT6517LT1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.1A, and min. DC current gain of 15. It is used in small outline packages for applications requiring high power dissipation and temp up to 150 °C.

Median Price

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Lifecycle Status

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3

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1k+

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Chip Stock

USA . 65,000 parts In-Stock

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Vyrian

USA . 12,880 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 66 parts In-Stock

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Kepictronics

USA . 89,600 parts In-Stock

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TANS Electronics

Latvia . 6,663 parts In-Stock

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Kulean Microsystems

USA . 4,515 parts In-Stock

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Problanco Electronics

Mexico . 2,175 parts In-Stock

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SupplyDigital Components

Austria . 2,110 parts In-Stock

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UHIMA Technologies

Türkiye . 663 parts In-Stock

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Corohmni

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Corphita

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Overview

Enhance your electronic projects with the NSVMMBT6517LT1G by Onsemi, a top-quality NPN Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted name in the industry, this transistor offers reliable performance and durability. Ideal for a variety of applications, this transistor is perfect for amplification and switching tasks. With a maximum collector-emitter voltage of 350V and a maximum operating temperature of 150 °C, this transistor provides excellent power dissipation and efficiency. Upgrade your projects today with the NSVMMBT6517LT1G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile and widely applicable.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into various electronic systems.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, reducing production time and costs.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high heat environments and maintain reliable performance.

Maximum Collector-Emitter Voltage: 350 V

The high collector-emitter voltage rating of 350V allows the transistor to be used in a wide range of high voltage applications.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures stable and consistent amplification in different circuit configurations.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is suitable for low to medium power applications.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency of 40MHz indicates that this transistor is capable of high-speed switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMBT6517LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVMMBT6517LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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