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NSVMMBT6429LT1G

Onsemi

NSVMMBT6429LT1G by Onsemi

NSVMMBT6429LT1G by Onsemi is a NPN BJT with max power dissipation of 0.3W, hFE of 500, and fT of 100MHz. Ideal for applications requiring small signal amplification in surface mount configurations at temperatures up to 150°C.

Median Price

$0.122

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 384,000 parts In-Stock

1+ parts

$0.234

100+ parts

$0.094

1k+ parts

-

10k+ parts

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384,000

$0.234

$0.094

-

-

Mouser Electronics

USA . 7,693 parts In-Stock

1+ parts

$0.330

100+ parts

$0.128

1k+ parts

$0.084

10k+ parts

$0.058

7,693

$0.330

$0.128

$0.084

$0.058

DigiKey

USA . 1,246 parts In-Stock

1+ parts

$0.330

100+ parts

$0.127

1k+ parts

$0.083

10k+ parts

-

1,246

$0.330

$0.127

$0.083

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Newark

USA . 83,700 parts In-Stock

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$0.084

83,700

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-

$0.084

Farnell

UK . 8,175 parts In-Stock

1+ parts

-

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$0.045

10k+ parts

$0.034

8,175

-

-

$0.045

$0.034

Element14

Singapore . 8,175 parts In-Stock

1+ parts

-

100+ parts

$0.122

1k+ parts

$0.095

10k+ parts

$0.067

8,175

-

$0.122

$0.095

$0.067

Flip Electronics (Authorized)

USA . 2,435 parts In-Stock

1+ parts

-

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2,435

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Rochester

USA . 1,104 parts In-Stock

1+ parts

-

100+ parts

$0.054

1k+ parts

$0.045

10k+ parts

$0.040

1,104

-

$0.054

$0.045

$0.040

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,304 parts In-Stock

1+ parts

$0.042

100+ parts

-

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1,304

$0.042

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Nova Conductors

Japan . 48 parts In-Stock

1+ parts

$0.073

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48

$0.073

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Chip Stock

USA . 77,000 parts In-Stock

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77,000

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Vyrian

USA . 54,058 parts In-Stock

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54,058

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IBS Electronics

USA . 39,000 parts In-Stock

1+ parts

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$0.084

39,000

-

-

-

$0.084

NAC Semi

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

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$0.064

36,000

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-

-

$0.064

Flip Electronics

USA . 2,435 parts In-Stock

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100+ parts

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2,435

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 54,160 parts In-Stock

1+ parts

$0.037

100+ parts

$0.036

1k+ parts

$0.036

10k+ parts

-

54,160

$0.037

$0.036

$0.036

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Ampacity Inc.

Singapore . 54,033 parts In-Stock

1+ parts

$0.037

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54,033

$0.037

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Corphita

USA . 2,460 parts In-Stock

1+ parts

$0.040

100+ parts

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2,460

$0.040

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Component Stockers USA

USA . 561,609 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.030

561,609

$0.040

$0.040

$0.040

$0.030

Corohmni

South Africa . 110 parts In-Stock

1+ parts

$0.044

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110

$0.044

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Argo Parts USA

USA . 4,881 parts In-Stock

1+ parts

$0.073

100+ parts

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1k+ parts

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10k+ parts

$0.071

4,881

$0.073

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-

$0.071

Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Continental Prestige Electronics

USA . 8,675 parts In-Stock

1+ parts

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100+ parts

$0.070

1k+ parts

$0.054

10k+ parts

$0.037

8,675

-

$0.070

$0.054

$0.037

TANS Electronics

Latvia . 5,374 parts In-Stock

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5,374

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SupplyDigital Components

Austria . 3,756 parts In-Stock

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3,756

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Kulean Microsystems

USA . 3,632 parts In-Stock

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3,632

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Problanco Electronics

Mexico . 3,490 parts In-Stock

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Lixinc

USA . 2,158 parts In-Stock

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2,158

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QUARKTWIN TECHNOLOGY LTD

USA . 2,094 parts In-Stock

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2,094

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UHIMA Technologies

Türkiye . 547 parts In-Stock

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547

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Overview

Discover the NSVMMBT6429LT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in electronic components, this NPN transistor is designed for a wide range of applications. With a single configuration and surface mount capability, this transistor provides ease of use and versatility. Experience the benefits of a maximum power dissipation of 0.3W, minimum DC current gain of 500, and maximum operating temperature of 150°C. Trust Onsemi's expertise and innovation to deliver superior products like the NSVMMBT6429LT1G for your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic devices.

Surface Mount: YES

Surface mount capability allows for compact and space-saving PCB designs, ideal for modern electronics where space is limited.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power applications without overheating.

Minimum DC Current Gain (hFE): 500

A high minimum DC current gain of 500 ensures stable and reliable amplification in circuit designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable performance in various environmental conditions.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2A, this transistor can handle moderate current loads in circuit applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time of 30 seconds at peak temperature simplifies manufacturing processes and reduces the risk of damage to the transistor.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without degradation.

Nominal Transition Frequency (fT): 100 MHz

A high nominal transition frequency of 100 MHz indicates fast response and good high-frequency performance in signal amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMBT6429LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

500

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

NSVMMBT6429LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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