Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NSVMMBT6429LT1G by Onsemi is a NPN BJT with max power dissipation of 0.3W, hFE of 500, and fT of 100MHz. Ideal for applications requiring small signal amplification in surface mount configurations at temperatures up to 150°C.
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NPN transistors are commonly used in amplification circuits, making this product suitable for a wide range of applications.
Single configuration simplifies circuit design and integration, making it easier to use in various electronic devices.
Surface mount capability allows for compact and space-saving PCB designs, ideal for modern electronics where space is limited.
With a maximum power dissipation of 0.3W, this transistor can handle moderate power applications without overheating.
A high minimum DC current gain of 500 ensures stable and reliable amplification in circuit designs.
The high maximum operating temperature of 150°C allows for reliable performance in various environmental conditions.
With a maximum collector current of 0.2A, this transistor can handle moderate current loads in circuit applications.
Matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.
Short reflow time of 30 seconds at peak temperature simplifies manufacturing processes and reduces the risk of damage to the transistor.
With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without degradation.
A high nominal transition frequency of 100 MHz indicates fast response and good high-frequency performance in signal amplification applications.
Small Signal Bipolar Junction Transistors (BJT) NSVMMBT6429LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi
Maximum Collector Current (IC):
Configuration:
Minimum DC Current Gain (hFE):
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
Maximum Operating Temperature:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Maximum Time At Peak Reflow Temperature (s):
Nominal Transition Frequency (fT):
NSVMMBT6429LT1G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Pd-Coated Cu Wire Update 23/Sep/2015 SOT23 27/Sep/2016
PCN Assembly/Origin - Compound Qual 14/Jun/2019
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
BSS123-7-F
Diodes Incorporated
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
NE555D
Philips Semiconductors
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM358D-T
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148WT
Onsemi
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
M24308/2-1F
Positronic Industries
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Body or Shell Style: RECEPTACLE;
DS18B20Z+T&R
Analog Devices
DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.
MMBT3904LT1G
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
1N4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
M39029/58-360
TE Connectivity
TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.
Bytesonic Electronics
Sinyork
RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;
BSS138
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
Digitron Semiconductors
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
BAV99
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Gec Plessey Semiconductors
FDLL4148
National Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N3906
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847B
Panjit International
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200; No. of Terminals: 3;
Kodenshi Auk
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
2N2905A
Solid State Devices
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC807-40W-7
Diodes Inc. BC807-40W-7 is a PNP BJT transistor with 170 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates up to 150°C with 0.5A IC and 0.2W power dissipation.
BC857B,215
Nexperia
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
JANTX2N2222AUA
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DC Current Gain (hFE): 30;
JANTX2N2222AUBT/R
Microchip Technology
JANTX2N2222AUBT/R by Microchip is a NPN BJT transistor for switching applications. It has hFE of 30, Vce of 50V, and Ic of 0.8A. With a turn on time of 35ns and turn off time of 300ns, it's ideal for fast-switching circuits in military-grade electronics per MIL-19500/255 standards.
MMBT3906
Yangzhou Yangjie Electronics
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;
MMBT2222A,215
NXP Semiconductors
NXP Semiconductors' MMBT2222A,215 is a NPN BJT transistor with 40V VCEO and 0.6A IC. It has a hFE of 40, fT of 300MHz, and Ptot of 0.25W. Ideal for switching applications in small outline packages with Gull Wing terminals.
JANTX2N2222AUB
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Reference Standard: MIL-19500;
Vishay Intertechnology
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .2 A;
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2219A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Body Material: METAL; No. of Terminals: 3;
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .6 A;
MMBT2222A
Jiangsu Changjiang Electronics Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;
MMBT3904
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; JESD-609 Code: e3;
BC846BPDW1T1G
BC846BPDW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types. It has a max VCEsat of 0.65V, hFE of 200, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and dual terminal position for surface mount assembly.
2N3904
Nec Electronics America
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
MMBT2907A
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL;
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NSVMMBT2222ATT1G
Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
NSVMMBT2907AWT1G
NSVMMBT2907AWT1G by Onsemi is a PNP BJT transistor with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for amplifier applications due to its small outline package style and high transition frequency. Features Gull Wing terminals and operates up to 150°C, meeting AEC-Q101 standard.
NSVMMBT2907AM3T5G
NSVMMBT2907AM3T5G by Onsemi is a PNP BJT transistor with VCEsat of 1.6V, hFE of 50, and IC of 0.6A. Ideal for amplifier applications, it has a max operating temp of 150°C and fT of 200MHz. Suitable for surface mount with a package style of small outline.
NSVMMBT3906TT1G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn Off Time (toff): 300 ns;
NSVMMBT2222AM3T5G
NSVMMBT2222AM3T5G by Onsemi is a NPN BJT transistor with max VCEsat of 1V, hFE of 75, and IC of 0.6A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 300MHz. Suitable for surface mount designs with operating temperatures ranging from -55°C to 150°C.
NSVMMUN2232LT1G
NSVMMUN2232LT1G by Onsemi is a NPN BJT with max power dissipation of 0.4W, min hFE of 15, and max IC of 0.1A. Ideal for surface mount applications in small signal circuits due to its silicon element material and matte tin terminal finish.
NSVMMBT5401LT3G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
NSVMMBT5401WT1G
NSVMMBT5550LT1G
NSVMMBT5550LT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.25V, hFE of 20, and IC of 0.6A. It is used in automotive applications due to AEC-Q101 standard compliance and can operate b/w -55 to 150°C.
NSVMMUN2235LT1G
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL; Maximum Collector-Emitter Voltage: 50 V;
NSVMMBTA05LT1G
Small Signal Bipolar Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
NSVMMBT5551M3T5G
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .06 A; Maximum Collector-Emitter Voltage: 160 V; Transistor Element Material: SILICON;
NSVMMUN2112LT1G
NSVMMUN2112LT1G by Onsemi is a PNP BJT transistor with max power dissipation of 0.4W, min hFE of 60, and max IC of 0.1A. Ideal for surface mount applications in electronics requiring low current amplification and switching capabilities.
NSVMMBT5087LT1G
Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
NSVMMBT6520LT1G
NSVMMBT6520LT1G by Onsemi is a PNP BJT with 350V VCEO, 0.5A IC, and 40MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp.
NSVMMBT4401WT1G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;
NSVMMUN2232LT3G
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
NSVMMBT589LT1G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .71 W; Maximum Collector Current (IC): 1 A;
NSVMMBT5087LT3G
Small Signal Bipolar Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
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