Loading...

NSVMMBT3906TT1G

Onsemi

NSVMMBT3906TT1G by Onsemi

NSVMMBT3906TT1G by Onsemi is a PNP BJT transistor with hFE of 30, Vce of 40V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package style and Gull Wing terminals for surface mount assembly.

Median Price

$0.077

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12,437 parts In-Stock

1+ parts

$0.350

100+ parts

$0.134

1k+ parts

$0.088

10k+ parts

$0.068

12,437

$0.350

$0.134

$0.088

$0.068

Flip Electronics (Authorized)

USA . 171,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

171,000

-

-

-

-

Newark

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.077

60,000

-

-

-

$0.077

DigiKey

USA . 6,136 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

6,136

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.081

-

-

-

Digiode

USA . 731 parts In-Stock

1+ parts

$0.218

100+ parts

-

1k+ parts

-

10k+ parts

-

731

$0.218

-

-

-

Flip Electronics

USA . 177,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

177,000

-

-

-

-

Vyrian

USA . 60,030 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60,030

-

-

-

-

Chip Stock

USA . 55,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

55,000

-

-

-

-

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.082

6,000

-

-

-

$0.082

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 464 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

464

$0.078

-

-

-

Argo Parts USA

USA . 4,077 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

-

10k+ parts

$0.078

4,077

$0.081

-

-

$0.078

Continental Prestige Electronics

USA . 3,408 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

-

10k+ parts

$0.079

3,408

$0.081

-

-

$0.079

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.083

100+ parts

$0.079

1k+ parts

$0.079

10k+ parts

-

500

$0.083

$0.079

$0.079

-

Ampacity Inc.

Singapore . 60,131 parts In-Stock

1+ parts

$0.196

100+ parts

-

1k+ parts

-

10k+ parts

-

60,131

$0.196

-

-

-

Semicontronic

India . 59,761 parts In-Stock

1+ parts

$0.196

100+ parts

$0.191

1k+ parts

$0.190

10k+ parts

-

59,761

$0.196

$0.191

$0.190

-

Corphita

USA . 76 parts In-Stock

1+ parts

$0.207

100+ parts

-

1k+ parts

-

10k+ parts

-

76

$0.207

-

-

-

Aztec Data Supply Inc.

USA . 340 parts In-Stock

1+ parts

$0.860

100+ parts

-

1k+ parts

-

10k+ parts

-

340

$0.860

-

-

-

Perfect Parts

USA . 26,880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,880

-

-

-

-

Lixinc

USA . 10,559 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,559

-

-

-

-

Kulean Microsystems

USA . 7,323 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,323

-

-

-

-

TANS Electronics

Latvia . 6,796 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,796

-

-

-

-

SupplyDigital Components

Austria . 5,466 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,466

-

-

-

-

Infinite Electronics LLP (Excess)

. 2,660 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,660

-

-

-

-

UHIMA Technologies

Türkiye . 925 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

925

-

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.077

10k+ parts

$0.075

500

-

$0.079

$0.077

$0.075

Problanco Electronics

Mexico . 186 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

186

-

-

-

-

Overview

Enhance your electronic designs with the NSVMMBT3906TT1G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability for small signal bipolar junction transistors. Ideal for amplifier applications, this PNP transistor offers seamless performance in a compact package. With a minimum DC current gain of 30 and a maximum collector-emitter voltage of 40V, this transistor delivers exceptional efficiency and precision. Trust Onsemi to provide the perfect solution for your electronic needs with the NSVMMBT3906TT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Polarity or Channel Type: PNP

Allows for current to flow from emitter to collector, making it compatible with many amplifier circuits.

Surface Mount: YES

Easy to mount on circuit boards, saving space and making the assembly process more efficient.

Minimum DC Current Gain (hFE): 30

Provides good amplification capabilities for signal processing and amplification applications.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low voltage applications, ensuring safe operation within specified limits.

Maximum Turn On Time (ton): 70 ns

Fast turn-on time allows for quick response in switching applications.

Maximum Collector Current (IC): 0.2 A

Sufficient current handling capacity for small signal applications.

Terminal Finish: MATTE TIN

Provides good electrical conductivity and corrosion resistance for reliable connections.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency enables fast signal processing and switching capabilities.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMBT3906TT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NSVMMBT3906TT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19