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NSVMMBT589LT1G

Onsemi

NSVMMBT589LT1G by Onsemi

NSVMMBT589LT1G by Onsemi is a PNP BJT with max power dissipation of 0.71W, hFE of 100, and fT of 100MHz. Ideal for applications requiring a single configuration SMT transistor with a max collector current of 1A, operating up to 150°C.

Median Price

$0.920

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,613 parts In-Stock

1+ parts

$0.920

100+ parts

$0.372

1k+ parts

$0.257

10k+ parts

-

2,613

$0.920

$0.372

$0.257

-

Mouser Electronics

USA . 621 parts In-Stock

1+ parts

$1.050

100+ parts

$0.447

1k+ parts

$0.278

10k+ parts

$0.209

621

$1.050

$0.447

$0.278

$0.209

Chip1Stop

Japan . 2,582 parts In-Stock

1+ parts

$1.980

100+ parts

$0.575

1k+ parts

$0.379

10k+ parts

-

2,582

$1.980

$0.575

$0.379

-

Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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15,000

-

-

-

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Rochester

USA . 8,242 parts In-Stock

1+ parts

-

100+ parts

$0.224

1k+ parts

$0.186

10k+ parts

$0.166

8,242

-

$0.224

$0.186

$0.166

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.207

6,000

-

-

-

$0.207

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 427 parts In-Stock

1+ parts

$0.174

100+ parts

-

1k+ parts

-

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427

$0.174

-

-

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Vyrian

USA . 675 parts In-Stock

1+ parts

$0.183

100+ parts

-

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675

$0.183

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-

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Chip Stock

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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60,000

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Flip Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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15,000

-

-

-

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DigiKey Marketplace

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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15,000

-

-

-

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ComSIT Distribution GmbH

Germany . 1,505 parts In-Stock

1+ parts

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100+ parts

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1,505

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ComSIT USA

USA . 1,505 parts In-Stock

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1,505

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 77 parts In-Stock

1+ parts

$0.165

100+ parts

-

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77

$0.165

-

-

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Corohmni

South Africa . 213 parts In-Stock

1+ parts

$0.183

100+ parts

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213

$0.183

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Kepictronics

USA . 65,850 parts In-Stock

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65,850

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Perfect Parts

USA . 19,198 parts In-Stock

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19,198

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Continental Prestige Electronics

USA . 9,000 parts In-Stock

1+ parts

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100+ parts

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$0.220

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9,000

-

-

$0.220

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Problanco Electronics

Mexico . 7,845 parts In-Stock

1+ parts

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7,845

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TANS Electronics

Latvia . 3,994 parts In-Stock

1+ parts

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3,994

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GreenTree Electronics

Israel . 2,857 parts In-Stock

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2,857

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Authorized Procurement Solutions

USA . 2,757 parts In-Stock

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100+ parts

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2,757

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SupplyDigital Components

Austria . 2,023 parts In-Stock

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2,023

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Kulean Microsystems

USA . 1,763 parts In-Stock

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1,763

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UHIMA Technologies

Türkiye . 446 parts In-Stock

1+ parts

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446

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Overview

Enhance your electronic projects with the NSVMMBT589LT1G by Onsemi, a top-quality PNP bipolar junction transistor perfect for amplification and switching applications. Manufactured by Onsemi, a trusted name in the industry, this single configuration transistor offers a maximum power dissipation of 0.71W and a minimum DC current gain of 100. With a peak reflow temperature of 260°C and a nominal transition frequency of 100 MHz, this surface mount transistor provides reliability and efficiency in a compact package. Upgrade your circuits today with the NSVMMBT589LT1G and experience superior performance and durability.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in low-power applications, making this product suitable for small signal amplification and switching.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy implementation in various electronic applications.

Surface Mount: YES

Surface mount capability makes this transistor easier to assemble and allows for compact and efficient PCB designs.

Maximum Power Dissipation (Abs): 0.71 W

With a maximum power dissipation of 0.71 W, this transistor is suitable for low to medium power applications, providing reliable performance without overheating.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain of 100 ensures consistent and stable amplification of signals, making this transistor reliable for signal processing.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to withstand elevated temperatures, ensuring operational reliability in various environments.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor is capable of handling moderate current levels, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring durable connections and long-term performance.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures efficient soldering and reliability during the assembly process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, ensuring secure and robust connections.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates fast response and good high-frequency performance, making this transistor suitable for applications requiring high-speed signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMBT589LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

NSVMMBT589LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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