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NSVMMUN2232LT3G

Onsemi

NSVMMUN2232LT3G by Onsemi

NSVMMUN2232LT3G by Onsemi is a NPN BJT transistor with max power dissipation of 0.4W, min hFE of 15, and max IC of 0.1A. Ideal for surface mount applications in small signal circuits due to its silicon element material and matte tin terminal finish.

Median Price

$0.033

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,904 parts In-Stock

1+ parts

$0.028

100+ parts

-

1k+ parts

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10k+ parts

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4,904

$0.028

-

-

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Mouser Electronics

USA . 18,686 parts In-Stock

1+ parts

$0.180

100+ parts

$0.066

1k+ parts

$0.038

10k+ parts

$0.031

18,686

$0.180

$0.066

$0.038

$0.031

DigiKey

USA . 17,000 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

1k+ parts

$0.043

10k+ parts

$0.032

17,000

$0.180

$0.067

$0.043

$0.032

Flip Electronics (Authorized)

USA . 50,000 parts In-Stock

1+ parts

-

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50,000

-

-

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Chip1Stop

Japan . 7,393 parts In-Stock

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$0.033

7,393

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-

-

$0.033

Verical

USA . 4,904 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.028

10k+ parts

-

4,904

-

-

$0.028

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 718 parts In-Stock

1+ parts

$0.146

100+ parts

-

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718

$0.146

-

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Flip Electronics

USA . 50,000 parts In-Stock

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50,000

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Vyrian

USA . 21,839 parts In-Stock

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21,839

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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Ampacity Inc.

Singapore . 21,423 parts In-Stock

1+ parts

$0.025

100+ parts

-

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21,423

$0.025

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Corohmni

South Africa . 266 parts In-Stock

1+ parts

$0.029

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266

$0.029

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Corphita

USA . 2,429 parts In-Stock

1+ parts

$0.139

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2,429

$0.139

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Aztec Data Supply Inc.

USA . 94 parts In-Stock

1+ parts

$1.770

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94

$1.770

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TANS Electronics

Latvia . 8,176 parts In-Stock

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8,176

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SupplyDigital Components

Austria . 8,169 parts In-Stock

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8,169

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Kulean Microsystems

USA . 6,626 parts In-Stock

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6,626

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Problanco Electronics

Mexico . 4,531 parts In-Stock

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4,531

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Continental Prestige Electronics

USA . 1,916 parts In-Stock

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1,916

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Argo Parts USA

USA . 693 parts In-Stock

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693

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Aranea Global

USA . 100 parts In-Stock

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100

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UHIMA Technologies

Türkiye . 9 parts In-Stock

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9

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Overview

Enhance your electronic projects with the NSVMMUN2232LT3G by Onsemi, a top-quality NPN small signal bipolar junction transistor. Manufactured by Onsemi, this component offers reliable performance and precise functionality. Ideal for a variety of applications, this transistor is perfect for amplification and switching tasks. Upgrade your designs with this surface-mount transistor that boasts a maximum power dissipation of 0.4W and a minimum DC current gain of 15. Trust in Onsemi's reputation for excellence and unlock the potential of your projects with the NSVMMUN2232LT3G.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for a wide range of applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly processes.

Maximum Power Dissipation (Abs): 0.4 W

With a high maximum power dissipation, this transistor can handle relatively high power levels without overheating, enhancing reliability.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures efficient amplification of signals, making this transistor suitable for various signal processing applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable choice for electronic circuits.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current allows for handling moderate current levels, making this transistor suitable for different types of circuit designs.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and solderability, ensuring secure connections and reliable performance in electronic systems.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature facilitates quick and efficient soldering processes, reducing the risk of heat-related damage to the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of 260°C allows for reliable soldering in various manufacturing environments, ensuring consistent performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMUN2232LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

15

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSVMMUN2232LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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