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NSVMMBT2907AM3T5G

Onsemi

NSVMMBT2907AM3T5G by Onsemi

NSVMMBT2907AM3T5G by Onsemi is a PNP BJT transistor with VCEsat of 1.6V, hFE of 50, and IC of 0.6A. Ideal for amplifier applications, it has a max operating temp of 150°C and fT of 200MHz. Suitable for surface mount with a package style of small outline.

Median Price

$0.115

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,428 parts In-Stock

1+ parts

$0.370

100+ parts

$0.142

1k+ parts

$0.093

10k+ parts

$0.083

2,428

$0.370

$0.142

$0.093

$0.083

Mouser Electronics

USA . 548 parts In-Stock

1+ parts

$0.470

100+ parts

$0.210

1k+ parts

$0.115

10k+ parts

$0.076

548

$0.470

$0.210

$0.115

$0.076

Avnet

USA . 104,000 parts In-Stock

1+ parts

-

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104,000

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Arrow

USA . 16,000 parts In-Stock

1+ parts

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$0.046

16,000

-

-

-

$0.046

Verical

USA . 16,000 parts In-Stock

1+ parts

-

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$0.046

16,000

-

-

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$0.046

Chip1Stop

Japan . 16,000 parts In-Stock

1+ parts

-

100+ parts

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$0.057

16,000

-

-

-

$0.057

Flip Electronics (Authorized)

USA . 7,990 parts In-Stock

1+ parts

-

100+ parts

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7,990

-

-

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Element14

Singapore . 5,410 parts In-Stock

1+ parts

-

100+ parts

$0.164

1k+ parts

$0.093

10k+ parts

$0.082

5,410

-

$0.164

$0.093

$0.082

Farnell

UK . 3,005 parts In-Stock

1+ parts

-

100+ parts

$0.105

1k+ parts

$0.062

10k+ parts

$0.058

3,005

-

$0.105

$0.062

$0.058

Newark

USA . 35 parts In-Stock

1+ parts

-

100+ parts

$0.125

1k+ parts

$0.078

10k+ parts

-

35

-

$0.125

$0.078

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Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.089

100+ parts

-

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10

$0.089

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Digiode

USA . 341 parts In-Stock

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$0.238

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341

$0.238

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NAC Semi

USA . 80,000 parts In-Stock

1+ parts

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$0.072

80,000

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$0.072

Chip Stock

USA . 41,000 parts In-Stock

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41,000

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Vyrian

USA . 15,591 parts In-Stock

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Flip Electronics

USA . 7,990 parts In-Stock

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7,990

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Cyclops Electronics Ltd

UK . 7,590 parts In-Stock

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7,590

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 15,642 parts In-Stock

1+ parts

$0.039

100+ parts

$0.038

1k+ parts

$0.038

10k+ parts

-

15,642

$0.039

$0.038

$0.038

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Ampacity Inc.

Singapore . 15,569 parts In-Stock

1+ parts

$0.039

100+ parts

-

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15,569

$0.039

-

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Corohmni

South Africa . 226 parts In-Stock

1+ parts

$0.046

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226

$0.046

-

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Argo Parts USA

USA . 4,116 parts In-Stock

1+ parts

$0.089

100+ parts

-

1k+ parts

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10k+ parts

$0.086

4,116

$0.089

-

-

$0.086

Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

$0.089

100+ parts

$0.085

1k+ parts

$0.080

10k+ parts

$0.079

500

$0.089

$0.085

$0.080

$0.079

Corphita

USA . 2,104 parts In-Stock

1+ parts

$0.225

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2,104

$0.225

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Aztec Data Supply Inc.

USA . 992 parts In-Stock

1+ parts

$1.373

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992

$1.373

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.606

100+ parts

$1.525

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$1.525

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350

$1.606

$1.525

$1.525

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Eastek

USA . 104,000 parts In-Stock

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104,000

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GreenTree Electronics

Israel . 8,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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iodParts Technologies Inc.

India . 7,575 parts In-Stock

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7,575

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TANS Electronics

Latvia . 6,514 parts In-Stock

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Problanco Electronics

Mexico . 6,233 parts In-Stock

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SupplyDigital Components

Austria . 6,016 parts In-Stock

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6,016

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Continental Prestige Electronics

USA . 5,410 parts In-Stock

1+ parts

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$0.063

1k+ parts

$0.042

10k+ parts

$0.029

5,410

-

$0.063

$0.042

$0.029

Kulean Microsystems

USA . 5,175 parts In-Stock

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5,175

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QUARKTWIN TECHNOLOGY LTD

USA . 3,480 parts In-Stock

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3,480

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UHIMA Technologies

Türkiye . 776 parts In-Stock

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776

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Overview

Upgrade your electronic devices with the NSVMMBT2907AM3T5G by Onsemi! Crafted with precision and quality by a trusted manufacturer, this small signal bipolar junction transistor (BJT) offers superior performance in amplifier applications. With its PNP polarity, single configuration, and high DC current gain, this transistor ensures efficient power dissipation and reliable operation. Its compact size, surface mount capability, and wide operating temperature range make it ideal for various electronic projects. Trust Onsemi to deliver exceptional quality and value with the NSVMMBT2907AM3T5G!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE

Simplified design with a single transistor configuration.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Enables easy and efficient PCB assembly process.

Maximum VCEsat: 1.6 V

Low saturation voltage helps in minimizing power loss.

Package Shape: RECTANGULAR

Compact rectangular shape allows for space-efficient placement on the PCB.

Terminal Form: FLAT

Flat terminals provide stable and secure connection.

No. of Terminals: 3

Simplified three-terminal setup for easy integration.

Maximum Power Dissipation (Abs): 0.64 W

Capability to handle power efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Compact small outline package for space-saving designs.

Minimum DC Current Gain (hFE): 50

Consistent and reliable amplification capabilities.

Maximum Operating Temperature: 150 °C

High temperature tolerance for reliable performance in various environments.

Maximum Collector-Base Capacitance: 8 pF

Low capacitance for improved high-frequency performance.

Maximum Collector-Emitter Voltage: 60 V

Sufficient voltage handling capacity for various applications.

Transistor Element Material: SILICON

High-quality silicon material ensures durability and performance.

Maximum Turn On Time (ton): 45 ns

Fast turn-on time for quick response in switching applications.

Minimum Operating Temperature: -55 °C

Wide operating temperature range for versatile use.

Maximum Collector Current (IC): 0.6 A

Adequate collector current rating for many low-power applications.

Maximum Turn Off Time (toff): 100 ns

Quick turn-off time for efficient switching operations.

Terminal Finish: MATTE TIN

Matte tin finish for enhanced solderability.

Terminal Position: DUAL

Dual terminal position for stability and secure connectivity.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal time at peak reflow temperature for reliable soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for efficient soldering processes.

Reference Standard: AEC-Q101

Compliance with automotive electronic council standards for quality assurance in automotive applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency for improved high-frequency performance in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMBT2907AM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Maximum VCEsat:

1.6 V

Trade Compliance

NSVMMBT2907AM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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