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NSVMMUN2235LT1G

Onsemi

NSVMMUN2235LT1G by Onsemi

NSVMMUN2235LT1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has hFE of 80, VCE of 50V, and IC of 0.1A. This small outline transistor in gull wing package is ideal for automotive use due to AEC-Q101 standard compliance.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 14,860 parts In-Stock

1+ parts

$0.160

100+ parts

$0.061

1k+ parts

$0.034

10k+ parts

$0.024

14,860

$0.160

$0.061

$0.034

$0.024

DigiKey

USA . 144,275 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

1k+ parts

$0.043

10k+ parts

-

144,275

$0.180

$0.067

$0.043

-

Mouser Electronics

USA . 83,608 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

1k+ parts

$0.043

10k+ parts

$0.033

83,608

$0.180

$0.067

$0.043

$0.033

Newark

USA . 1,362,000 parts In-Stock

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-

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$0.035

1,362,000

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$0.035

Verical

USA . 14,860 parts In-Stock

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-

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$0.036

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$0.033

14,860

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-

$0.036

$0.033

Chip1Stop

Japan . 14,860 parts In-Stock

1+ parts

-

100+ parts

$0.044

1k+ parts

$0.036

10k+ parts

$0.034

14,860

-

$0.044

$0.036

$0.034

RS (Exports)

UK . 6,000 parts In-Stock

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-

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$0.043

6,000

-

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$0.043

Rochester

USA . 2,100 parts In-Stock

1+ parts

-

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$0.022

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$0.018

10k+ parts

$0.017

2,100

-

$0.022

$0.018

$0.017

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,278 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,278

$0.024

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Nova Conductors

Japan . 50 parts In-Stock

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$0.065

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50

$0.065

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IBS Electronics

USA . 780,000 parts In-Stock

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$0.035

780,000

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$0.035

Right Parts Inc.

USA . 118,000 parts In-Stock

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Chip Stock

USA . 50,000 parts In-Stock

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NAC Semi

USA . 18,000 parts In-Stock

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$0.051

18,000

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$0.051

Vyrian

USA . 4,240 parts In-Stock

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4,240

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Cyclops Electronics Ltd

UK . 196 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 16,146 parts In-Stock

1+ parts

$0.021

100+ parts

$0.020

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$0.020

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16,146

$0.021

$0.020

$0.020

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Ampacity Inc.

Singapore . 16,136 parts In-Stock

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$0.021

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16,136

$0.021

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Corphita

USA . 2,046 parts In-Stock

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$0.022

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2,046

$0.022

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Corohmni

South Africa . 306 parts In-Stock

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$0.025

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306

$0.025

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Argo Parts USA

USA . 3,643 parts In-Stock

1+ parts

$0.065

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$0.063

3,643

$0.065

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$0.063

Continental Prestige Electronics

USA . 2,028 parts In-Stock

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$0.065

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$0.063

2,028

$0.065

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$0.063

Netroflash

USA . 100 parts In-Stock

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$0.065

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$0.063

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100

$0.065

$0.063

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Aztec Data Supply Inc.

USA . 814 parts In-Stock

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$1.175

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814

$1.175

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RC Electronics

USA . 144,296 parts In-Stock

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$0.070

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$0.060

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$0.060

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$0.060

$0.060

Eastek

USA . 105,000 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 81,000 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 8,629 parts In-Stock

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SupplyDigital Components

Austria . 7,842 parts In-Stock

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TANS Electronics

Latvia . 6,264 parts In-Stock

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Kulean Microsystems

USA . 6,053 parts In-Stock

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Problanco Electronics

Mexico . 4,942 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 99 parts In-Stock

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99

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Overview

Elevate your electronic projects with the NSVMMUN2235LT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted industry leader, this NPN transistor is designed for switching applications, making it ideal for a wide range of projects. With a built-in resistor and a maximum collector-emitter voltage of 50V, this transistor provides excellent value and efficiency. Upgrade your circuits today with the NSVMMUN2235LT1G and experience the superior quality and benefits that Onsemi products have to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching circuits, making this transistor versatile for various applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high efficiency and fast response times.

Surface Mount: YES

Suitable for surface mount technology, making it easier to integrate into compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the PCB.

Terminal Form: GULL WING

Gull wing terminals provide secure mechanical and electrical connections during surface mounting.

No. of Terminals: 3

Simple 3-terminal configuration for easy implementation in circuits.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and allows for dense PCB layouts.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures stable and reliable amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor can handle higher voltages in circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.1 A

Able to handle up to 0.1A of collector current, suitable for medium power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in PCB layout and mounting options.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 automotive quality standard ensures high reliability and performance in demanding environments.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMUN2235LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 21

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVMMUN2235LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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