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NSVMMUN2232LT1G

Onsemi

NSVMMUN2232LT1G by Onsemi

NSVMMUN2232LT1G by Onsemi is a NPN BJT with max power dissipation of 0.4W, min hFE of 15, and max IC of 0.1A. Ideal for surface mount applications in small signal circuits due to its silicon element material and matte tin terminal finish.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 64,790 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

1k+ parts

$0.043

10k+ parts

-

64,790

$0.180

$0.067

$0.043

-

Mouser Electronics

USA . 7,634 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.048

10k+ parts

$0.034

7,634

$0.200

$0.076

$0.048

$0.034

Newark

USA . 423,000 parts In-Stock

1+ parts

-

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$0.035

423,000

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$0.035

Verical

USA . 51,000 parts In-Stock

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$0.032

51,000

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$0.032

Arrow

USA . 48,000 parts In-Stock

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48,000

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Element14

Singapore . 3,000 parts In-Stock

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$0.054

10k+ parts

$0.040

3,000

-

-

$0.054

$0.040

Rochester

USA . 261 parts In-Stock

1+ parts

-

100+ parts

$0.022

1k+ parts

$0.018

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$0.017

261

-

$0.022

$0.018

$0.017

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,495 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,495

$0.024

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Nova Conductors

Japan . 34 parts In-Stock

1+ parts

$0.064

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-

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34

$0.064

-

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IBS Electronics

USA . 60,000 parts In-Stock

1+ parts

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$0.035

60,000

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$0.035

Chip Stock

USA . 29,000 parts In-Stock

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NAC Semi

USA . 24,000 parts In-Stock

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$0.028

24,000

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$0.028

Vyrian

USA . 5,766 parts In-Stock

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5,766

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Cyclops Electronics Ltd

UK . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 24,992 parts In-Stock

1+ parts

$0.021

100+ parts

-

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24,992

$0.021

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Corphita

USA . 1,400 parts In-Stock

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$0.022

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1,400

$0.022

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Corohmni

South Africa . 105 parts In-Stock

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$0.025

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105

$0.025

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Argo Parts USA

USA . 3,027 parts In-Stock

1+ parts

$0.064

100+ parts

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1k+ parts

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10k+ parts

$0.062

3,027

$0.064

-

-

$0.062

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

$0.061

10k+ parts

$0.060

1,000

$0.064

-

$0.061

$0.060

Aztec Data Supply Inc.

USA . 4,152 parts In-Stock

1+ parts

$0.862

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4,152

$0.862

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Perfect Parts

USA . 228,480 parts In-Stock

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228,480

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RC Electronics

USA . 124,211 parts In-Stock

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$0.070

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$0.060

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$0.060

124,211

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$0.070

$0.060

$0.060

Eastek

USA . 93,000 parts In-Stock

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GreenTree Electronics

Israel . 93,000 parts In-Stock

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Continental Prestige Electronics

USA . 48,261 parts In-Stock

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$0.040

Glotronic Ltd.

UK . 40,800 parts In-Stock

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Kepictronics

USA . 9,000 parts In-Stock

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Lixinc

USA . 6,027 parts In-Stock

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SupplyDigital Components

Austria . 4,946 parts In-Stock

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TANS Electronics

Latvia . 4,570 parts In-Stock

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Problanco Electronics

Mexico . 3,763 parts In-Stock

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3,763

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 445 parts In-Stock

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445

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Kulean Microsystems

USA . 400 parts In-Stock

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400

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Overview

Discover the unparalleled quality and reliability of the NSVMMUN2232LT1G by Onsemi, a leading manufacturer in the industry. This NPN small signal bipolar junction transistor offers exceptional performance in various applications. From amplification to switching, this surface-mount transistor provides maximum power dissipation of 0.4W and a minimum DC current gain of 15, ensuring optimal functionality. Trust in Onsemi's expertise and elevate your projects with the NSVMMUN2232LT1G for superior results.

Feature Benefit Bullets

Polarity or Channel Type NPN: NPN

This allows for easily switching between on/off states, making it versatile for various electronic applications.

Surface Mount: YES

This makes it suitable for compact and space-constrained circuit designs, perfect for modern electronic devices.

Maximum Power Dissipation (Abs): 0.4 W

With a high power dissipation capacity, this transistor can handle high loads without overheating, ensuring reliability.

Minimum DC Current Gain (hFE): 15

The high minimum DC current gain ensures accurate amplification, making it ideal for precision applications.

Transistor Element Material SILICON

Silicon is widely used in transistors due to its high efficiency, reliability, and compatibility with modern manufacturing processes.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish MATTE TIN

The matte tin finish allows for better soldering and connectivity, ensuring a reliable electrical connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

This short reflow time allows for quick and efficient assembly, reducing production time and costs.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand high-temperature soldering processes, ensuring durability during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMUN2232LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

15

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSVMMUN2232LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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