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NSVMMBT5551M3T5G

Onsemi

NSVMMBT5551M3T5G by Onsemi

NSVMMBT5551M3T5G by Onsemi is a NPN BJT transistor with hFE of 30, VCE of 160V, and IC of 0.06A. It is used in small outline applications requiring high voltage and current amplification in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 11,132 parts In-Stock

1+ parts

$0.300

100+ parts

$0.115

1k+ parts

$0.067

10k+ parts

$0.057

11,132

$0.300

$0.115

$0.067

$0.057

DigiKey

USA . 4,829 parts In-Stock

1+ parts

$0.300

100+ parts

$0.115

1k+ parts

$0.075

10k+ parts

$0.067

4,829

$0.300

$0.115

$0.075

$0.067

Future Electronics

Canada . 144,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.048

144,000

-

-

-

$0.048

Verical

USA . 112,000 parts In-Stock

1+ parts

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$0.059

112,000

-

-

-

$0.059

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.075

100+ parts

-

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500

$0.075

-

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-

Digiode

USA . 1,287 parts In-Stock

1+ parts

$0.342

100+ parts

-

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1,287

$0.342

-

-

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IBS Electronics

USA . 144,000 parts In-Stock

1+ parts

-

100+ parts

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$0.068

144,000

-

-

-

$0.068

NAC Semi

USA . 112,000 parts In-Stock

1+ parts

-

100+ parts

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$0.097

112,000

-

-

-

$0.097

Flip Electronics

USA . 96,000 parts In-Stock

1+ parts

-

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96,000

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Chip Stock

USA . 44,000 parts In-Stock

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44,000

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Vyrian

USA . 40,299 parts In-Stock

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40,299

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Cyclops Electronics Ltd

UK . 5,460 parts In-Stock

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5,460

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Distributors (Availability)

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Semicontronic

India . 77,743 parts In-Stock

1+ parts

$0.031

100+ parts

$0.030

1k+ parts

$0.030

10k+ parts

-

77,743

$0.031

$0.030

$0.030

-

Ampacity Inc.

Singapore . 40,307 parts In-Stock

1+ parts

$0.040

100+ parts

-

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40,307

$0.040

-

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Corohmni

South Africa . 75 parts In-Stock

1+ parts

$0.047

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75

$0.047

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Continental Prestige Electronics

USA . 3,528 parts In-Stock

1+ parts

$0.075

100+ parts

-

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10k+ parts

$0.073

3,528

$0.075

-

-

$0.073

Argo Parts USA

USA . 1,413 parts In-Stock

1+ parts

$0.075

100+ parts

-

1k+ parts

-

10k+ parts

$0.072

1,413

$0.075

-

-

$0.072

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.075

100+ parts

-

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100

$0.075

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Corphita

USA . 1,836 parts In-Stock

1+ parts

$0.324

100+ parts

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1,836

$0.324

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Kepictronics

USA . 64,000 parts In-Stock

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64,000

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QUARKTWIN TECHNOLOGY LTD

USA . 29,896 parts In-Stock

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29,896

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Lixinc

USA . 4,884 parts In-Stock

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4,884

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TANS Electronics

Latvia . 3,507 parts In-Stock

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3,507

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Problanco Electronics

Mexico . 2,317 parts In-Stock

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2,317

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SupplyDigital Components

Austria . 750 parts In-Stock

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750

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Kulean Microsystems

USA . 593 parts In-Stock

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593

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UHIMA Technologies

Türkiye . 254 parts In-Stock

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254

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Overview

Unlock the power of innovation with the NSVMMBT5551M3T5G by Onsemi- a high-quality small signal bipolar junction transistor perfect for a wide range of applications. Manufactured by industry leader Onsemi, this NPN transistor offers customers unparalleled value and benefits. With a maximum collector-emitter voltage of 160V and a minimum DC current gain of 30, this transistor delivers reliable performance. Whether you're designing electronics for automotive, industrial, or consumer applications, this surface-mount transistor is the perfect choice to enhance your next project. Upgrade your designs with the NSVMMBT5551M3T5G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent protection and insulation for the transistor, ensuring its durability and reliability.

Polarity or Channel Type: NPN

Ideal for amplification and switching applications, commonly used in signal processing circuits.

Surface Mount: YES

Suitable for automated assembly processes, saving time and cost in production.

Maximum Collector-Emitter Voltage: 160 V

Allows for high voltage operation, making it versatile for various electronic circuits.

Minimum DC Current Gain (hFE): 30

Ensures sufficient current amplification capabilities, crucial for signal processing applications.

Maximum Collector Current (IC): 0.06 A

Provides a decent current handling capacity for low-power circuit designs.

Terminal Finish: MATTE TIN

Enhances solderability and conductivity, ensuring secure connections in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMBT5551M3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSVMMBT5551M3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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