Loading...

NSVMMBT2222AM3T5G

Onsemi

NSVMMBT2222AM3T5G by Onsemi

NSVMMBT2222AM3T5G by Onsemi is a NPN BJT transistor with max VCEsat of 1V, hFE of 75, and IC of 0.6A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 300MHz. Suitable for surface mount designs with operating temperatures ranging from -55°C to 150°C.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 57,055 parts In-Stock

1+ parts

$0.042

100+ parts

$0.040

1k+ parts

$0.036

10k+ parts

-

57,055

$0.042

$0.040

$0.036

-

Arrow

USA . 16,000 parts In-Stock

1+ parts

$0.173

100+ parts

$0.067

1k+ parts

$0.039

10k+ parts

$0.033

16,000

$0.173

$0.067

$0.039

$0.033

Element14

Singapore . 2,966 parts In-Stock

1+ parts

$0.398

100+ parts

$0.166

1k+ parts

$0.114

10k+ parts

$0.072

2,966

$0.398

$0.166

$0.114

$0.072

DigiKey

USA . 57,055 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

57,055

-

-

-

$0.060

Verical

USA . 57,055 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.046

57,055

-

-

-

$0.046

Farnell

UK . 57,055 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

57,055

-

-

-

-

Chip1Stop

Japan . 5,939 parts In-Stock

1+ parts

-

100+ parts

$0.047

1k+ parts

$0.040

10k+ parts

$0.037

5,939

-

$0.047

$0.040

$0.037

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,078 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

1,078

$0.038

-

-

-

Nova Conductors

Japan . 800 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

-

800

$0.079

-

-

-

Vyrian

USA . 22,201 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22,201

-

-

-

-

Chip Stock

USA . 18,170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,170

-

-

-

-

NAC Semi

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.233

16,000

-

-

-

$0.233

IBS Electronics

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.079

16,000

-

-

-

$0.079

Cyclops Electronics Ltd

UK . 3,060 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,060

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 22,048 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

-

22,048

$0.030

-

-

-

Semicontronic

India . 20,895 parts In-Stock

1+ parts

$0.030

100+ parts

$0.029

1k+ parts

$0.029

10k+ parts

-

20,895

$0.030

$0.029

$0.029

-

Corohmni

South Africa . 250 parts In-Stock

1+ parts

$0.035

100+ parts

-

1k+ parts

-

10k+ parts

-

250

$0.035

-

-

-

Corphita

USA . 1,543 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

-

10k+ parts

-

1,543

$0.036

-

-

-

Argo Parts USA

USA . 1,258 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

$0.074

1,258

$0.076

-

-

$0.074

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.078

100+ parts

$0.078

1k+ parts

$0.078

10k+ parts

-

20

$0.078

$0.078

$0.078

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.079

-

-

-

Aztec Data Supply Inc.

USA . 2,027 parts In-Stock

1+ parts

$1.070

100+ parts

-

1k+ parts

-

10k+ parts

-

2,027

$1.070

-

-

-

Continental Prestige Electronics

USA . 57,055 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.046

10k+ parts

-

57,055

-

-

$0.046

-

SupplyDigital Components

Austria . 2,868 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,868

-

-

-

-

Kulean Microsystems

USA . 2,047 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,047

-

-

-

-

Problanco Electronics

Mexico . 1,541 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,541

-

-

-

-

UHIMA Technologies

Türkiye . 649 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

649

-

-

-

-

TANS Electronics

Latvia . 287 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

287

-

-

-

-

Overview

Discover the power of the NSVMMBT2222AM3T5G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor that guarantees superior performance and reliability. With Onsemi's renowned reputation for quality and innovation, this NPN transistor is perfect for amplifier applications with its high DC current gain and low VCEsat. Its compact package design and surface mount capability make it ideal for a wide range of electronic devices. Experience the benefits of seamless integration, enhanced efficiency, and unparalleled value with the NSVMMBT2222AM3T5G - your ultimate solution for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is known for its durability and heat resistance, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and implementation of circuits, making it convenient for circuit designers.

Maximum VCEsat: 1 V

A low VCEsat value indicates efficient switching performance with minimal voltage drop, resulting in energy-efficient operation.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable connections, enhancing the longevity of the product.

Nominal Transition Frequency (fT): 300 MHz

A high transition frequency enables high-frequency operation, making this transistor suitable for applications requiring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMBT2222AM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

1 V

Trade Compliance

NSVMMBT2222AM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19