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NSVMMBT6520LT1G

Onsemi

NSVMMBT6520LT1G by Onsemi

NSVMMBT6520LT1G by Onsemi is a PNP BJT with 350V VCEO, 0.5A IC, and 40MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 3,291 parts In-Stock

1+ parts

$0.750

100+ parts

$0.299

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$0.204

10k+ parts

$0.164

3,291

$0.750

$0.299

$0.204

$0.164

DigiKey

USA . 12,000 parts In-Stock

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$0.151

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$0.151

Arrow

USA . 3,000 parts In-Stock

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$0.149

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$0.149

Verical

USA . 3,000 parts In-Stock

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$0.149

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$0.149

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Digiode

USA . 1,125 parts In-Stock

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$0.484

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$0.484

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Chip Stock

USA . 60,000 parts In-Stock

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Vyrian

USA . 3,746 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,384 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Semicontronic

India . 3,546 parts In-Stock

1+ parts

$0.433

100+ parts

$0.422

1k+ parts

$0.420

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-

3,546

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$0.422

$0.420

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Ampacity Inc.

Singapore . 3,332 parts In-Stock

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$0.433

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Corohmni

South Africa . 195 parts In-Stock

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$0.440

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195

$0.440

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Corphita

USA . 1,919 parts In-Stock

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$0.459

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$0.459

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Aztec Data Supply Inc.

USA . 2,644 parts In-Stock

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$0.660

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Kepictronics

USA . 306,000 parts In-Stock

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Problanco Electronics

Mexico . 7,026 parts In-Stock

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SupplyDigital Components

Austria . 5,261 parts In-Stock

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Continental Prestige Electronics

USA . 3,729 parts In-Stock

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Kulean Microsystems

USA . 3,048 parts In-Stock

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TANS Electronics

Latvia . 2,443 parts In-Stock

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Argo Parts USA

USA . 1,895 parts In-Stock

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Bastille Electronics

Australia . 550 parts In-Stock

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UHIMA Technologies

Türkiye . 466 parts In-Stock

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Overview

Unleash the power of innovation with the NSVMMBT6520LT1G by Onsemi. As a leading manufacturer of Small Signal Bipolar Junction Transistors, Onsemi delivers top-notch quality with this PNP transistor in a compact rectangular package. With a maximum collector-emitter voltage of 350V and a DC current gain of 15, this transistor is perfect for a wide range of applications. From amplifiers to switching circuits, the NSVMMBT6520LT1G offers reliability, efficiency, and performance that exceeds expectations. Upgrade your projects today with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and reliability to the transistor, ensuring a long lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and are great for amplifying signals.

Surface Mount: YES

Surface mount capability makes it easy to integrate this transistor onto PCBs, saving space and enabling automated assembly.

Maximum Power Dissipation: 0.3 W

With a high maximum power dissipation, this transistor can handle moderate power loads without overheating.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures that the transistor provides sufficient amplification for various applications.

Maximum Collector-Emitter Voltage: 350 V

Can handle high voltage applications, making it versatile for a wide range of electronic circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current loads.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMBT6520LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVMMBT6520LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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