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BCP5316H6327XTSA1

Infineon Technologies

BCP5316H6327XTSA1 by Infineon Technologies

BCP5316H6327XTSA1 by Infineon is a PNP BJT with 4 terminals, 2W power dissipation, and 80V collector-emitter voltage. Ideal for amplifier applications, it has a min hFE of 100 and operates up to 150°C. This surface-mount transistor in a small outline package offers high performance with a transition frequency of 125MHz.

Median Price

$0.164

Lifecycle Status

EOL

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

$0.181

1k+ parts

$0.150

10k+ parts

$0.134

7,000

-

$0.181

$0.150

$0.134

Verical

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.185

7,000

-

-

-

$0.185

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.148

10k+ parts

$0.147

6,000

-

-

$0.148

$0.147

Chip1Stop

Japan . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.146

10k+ parts

-

2,000

-

-

$0.146

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 547 parts In-Stock

1+ parts

$0.141

100+ parts

-

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547

$0.141

-

-

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.265

100+ parts

-

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300

$0.265

-

-

-

Maritex

Poland . 98,790 parts In-Stock

1+ parts

$0.308

100+ parts

$0.222

1k+ parts

$0.165

10k+ parts

$0.131

98,790

$0.308

$0.222

$0.165

$0.131

Rutronik

Germany . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.168

10k+ parts

$0.149

7,000

-

-

$0.168

$0.149

TME

Poland . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.140

10k+ parts

-

7,000

-

-

$0.140

-

Vyrian

USA . 2,708 parts In-Stock

1+ parts

-

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2,708

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VNN

France . 982 parts In-Stock

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982

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,902 parts In-Stock

1+ parts

$0.105

100+ parts

-

1k+ parts

-

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10,902

$0.105

-

-

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Corphita

USA . 332 parts In-Stock

1+ parts

$0.133

100+ parts

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332

$0.133

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.265

100+ parts

$0.260

1k+ parts

-

10k+ parts

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2,000

$0.265

$0.260

-

-

Modulus Dynamics

Lithuania . 1,413 parts In-Stock

1+ parts

$1.571

100+ parts

$1.508

1k+ parts

$1.445

10k+ parts

-

1,413

$1.571

$1.508

$1.445

-

AZTECH Wire

Italy . 770 parts In-Stock

1+ parts

$10.550

100+ parts

-

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770

$10.550

-

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

1+ parts

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22,000

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Lixinc

USA . 2,843 parts In-Stock

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2,843

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Perfect Parts

USA . 2,296 parts In-Stock

1+ parts

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2,296

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Overview

Discover the power of Infineon Technologies with the BCP5316H6327XTSA1 small signal bipolar junction transistor. This high-quality PNP transistor is perfect for amplifier applications, offering reliability and performance that exceeds industry standards. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 80V, this transistor is designed to deliver exceptional results in a compact package. Upgrade your electronic designs with the superior value and benefits that only Infineon Technologies can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, making it ideal for portable electronic devices.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring PNP transistors, providing flexibility in design.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easy to incorporate into various applications.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor provides high gain and low noise characteristics, resulting in clear and strong signal amplification.

Surface Mount: YES

The surface mount capability allows for easy and efficient soldering onto PCBs, saving space and enabling high-density circuit designs.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy placement and soldering onto PCBs, ensuring a secure and stable connection.

Terminal Form: GULL WING

The gull-wing terminal form provides strong mechanical stability and facilitates automated assembly processes, improving overall product reliability.

No. of Terminals: 4

The 4 terminals offer increased connectivity options and flexibility in circuit design, accommodating a wide range of applications.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2 W, this transistor can handle high power levels, suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, enabling compact and lightweight designs for portable electronics.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCP5316H6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCP5316H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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