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BC847BLD-7

Diodes Incorporated

BC847BLD-7 by Diodes Incorporated

Diodes Inc. BC847BLD-7 is a NPN BJT with 150 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal amplification in electronic circuits due to its 0.3W Ptot, 0.2A IC, and SOT-23 package with Gull Wing terminals. Suitable for applications requiring high gain and low power consumption in compact designs.

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 17,475 parts In-Stock

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VNN

France . 904 parts In-Stock

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904

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Aztec Data Supply Inc.

USA . 178 parts In-Stock

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$1.130

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Corohmni

South Africa . 645 parts In-Stock

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$1.235

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645

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AZTECH Wire

Italy . 476 parts In-Stock

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$6.227

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Semicontronic

India . 1,008 parts In-Stock

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$46.050

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$44.899

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$44.668

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Ampacity Inc.

Singapore . 720 parts In-Stock

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$58.050

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QUARKTWIN TECHNOLOGY LTD

USA . 22,355 parts In-Stock

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Continental Prestige Electronics

USA . 6,579 parts In-Stock

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Bastille Electronics

Australia . 98 parts In-Stock

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Argo Parts USA

USA . 71 parts In-Stock

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Overview

Unlock the power of small signal bipolar junction transistors with the BC847BLD-7 by Diodes Incorporated. Crafted with precision and quality, this NPN transistor offers reliability and performance for a range of applications. With a maximum collector-emitter voltage of 45V and a nominal transition frequency of 100MHz, this transistor is ideal for amplification and switching tasks. Whether you're designing circuits for audio equipment or electronic appliances, the BC847BLD-7 delivers the value, benefits, and advantages you need to bring your projects to life. Choose Diodes Incorporated for cutting-edge technology that meets your demands.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Common type of BJT configuration, making it compatible with many circuit designs.

Configuration: SINGLE

Simplifies circuit design by having a single transistor in the package.

Surface Mount: YES

Easily mountable on PCBs, saving space and enabling automated assembly.

Package Shape: RECTANGULAR

Allows for easy placement and alignment on the circuit board.

Terminal Form: GULL WING

Facilitates secure soldering and strong mechanical connections.

No. of Terminals: 3

Simple and easy to connect in a circuit.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels, suitable for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

Compact and space-efficient package design.

Minimum DC Current Gain (hFE): 150

Ensures high gain for amplification applications.

Maximum Operating Temperature: 150 °C

Can operate reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 45 V

Supports a range of voltage levels in circuits.

Transistor Element Material: SILICON

High-performance semiconductor material for efficient transistor operation.

Maximum Collector Current (IC): 0.2 A

Capable of handling moderate current levels.

Terminal Finish: MATTE TIN

Ensures a good electrical connection and solderability.

Terminal Position: DUAL

Provides flexibility in circuit board layout and connections.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering processes for easy assembly.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes without damage.

Nominal Transition Frequency (fT): 100 MHz

Capable of high-frequency operation, suitable for various signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847BLD-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847BLD-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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